X-On Electronics has gained recognition as a prominent supplier of BC857B-TP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC857B-TP Bipolar Transistors - BJT are a product manufactured by Micro Commercial Components (MCC). We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC857B-TP Micro Commercial Components (MCC)

BC857B-TP electronic component of Micro Commercial Components (MCC)
BC857B-TP Micro Commercial Components (MCC)
BC857B-TP Bipolar Transistors - BJT
BC857B-TP  Semiconductors

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See Product Specifications
Part No. BC857B-TP
Manufacturer: Micro Commercial Components (MCC)
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 45 V 100 mA 200MHz 310 mW Surface Mount SOT-23
Datasheet: BC857B-TP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
9000: USD 0.0306 ea
Line Total: USD 275.4 
Availability - 279360
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ: 9000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
279360
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 9000
Multiples : 3000
9000 : USD 0.0306
12000 : USD 0.0268
12000 : USD 0.0229
21000 : USD 0.0206
30000 : USD 0.0197
75000 : USD 0.0184
150000 : USD 0.0168
300000 : USD 0.0155

18015
Ship by Wed. 11 Jun to Fri. 13 Jun
MOQ : 1
Multiples : 1
1 : USD 0.168
10 : USD 0.105
25 : USD 0.0826
100 : USD 0.056
500 : USD 0.035

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC857B-TP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC857B-TP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC85 7A,BC857B, BC85 7C Features For Switching and AF Amplifier Applications Halogen Free Available Upon Request By Adding Suffix-H PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Small Signal Lead Free Finish/RoHS Compliant Suffix Designates RoHS Transistor Compliant. See Ordering Information) Maximum Ratings SOT-23 Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 A (Note1) D Thermal Resistance: 320/W Junction to Solder-point (Note1) Thermal Resistance: 403/W Junction to Ambient B C Parameter Symbol Rating Unit V Collector-Base Voltage -50 V CBO F E V Collector-Emitter Voltage -45 V CEO V Emitter-Base Voltage -5 V EBO G H J Collector Current I -100 mA C L K I Peak Collector Current -200 mA CM I Peak Emitter Current -200 mA EM DIMENSIONS (Note1) P INCHES MM Power Dissipation T =50 310 mW D S DIM NOTE MIN MAX MIN MAX Note: 1. Package Mounted 1.0*1.0mm Pad Layout 1oz Copper That is On a A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 Single-sided FR4 PCB. C 0.047 0.055 1.20 1.40 D 0.034 0.041 0.85 1.05 E 0.067 0.083 1.70 2.10 F 0.018 0.024 0.45 0.60 Part Number BC857A BC857B BC857C G 0.01 0.15 0.0004 0.006 Marking 3E 3F 3G H 0.035 0.043 0.90 1.10 J 0.003 0.007 0.08 0.18 K 0.014 0.020 0.35 0.51 Internal Structure L 0.007 0.020 0.20 0.50 C Suggested Solder Pad Layout 0.031 0.800 0.035 E B 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-1-01012019 1/4 MCCSEMI.COMBC85 7A,BC857B, BC85 7C Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions (Note2) V -50 V I =-10A, I =0 Collector-Base Breakdown Voltage (BR)CBO C E (Note2) V -45 V I =-10mA, I =0 Collector-Emitter Breakdown Voltage (BR)CEO C B (Note2) V I =-1A, I =0 -5 V Emitter-Base Breakdown Voltage (BR)EBO E C I -15 nA V =-50V CES CE (Note2) V =-30V -15 nA Collector-Cutoff Current CB I CBO -4 A V =-30V, T =150 CB A BC857 A 125 180 250 (Note2) BC857 B h 220 290 475 V =-5Vdc, I =-2mA DC Current Gain FE CE C BC857 C 420 520 800 BC857 A 200 Small Signal Current Gain BC857 B h 330 fe BC857 C 600 BC857 A 2.7 h Input Impedance BC857 B 4.5 K ie V =-5V CE BC857 C 8.7 I =-2mA C BC857 A 18 f=1KHz Output Admittance BC857 B h 30 S oe BC857 C 60 -4 BC857 A 1.5x10 -4 h Reverse Voltage Transfer Ratio BC857 B re 2x10 -4 BC857 C 3x10 I =-10mA, I =-0.5mA -75 -300 mV C B (Note2) V Collector-Emitter Saturation Voltage CE(sat) I =-100mA, I =-5mA -250 -650 mV C B I =-10mA, I =-0.5mA -700 mV C B (Note2) V Base-Emitter Saturation Voltage BE(sat) -850 mV I =-100mA, I =-5mA C B -600 -650 -750 mV V =-5V, I =-2mA CE C (Note2) V Base-Emitter Voltage BE -820 mV V =-5V, I =-10mA CE C f V =-5V, I =-10mA, f=100MHz Current Gain-Bandwidth Product 100 200 MHz T CE C C V =-10V, f=1MHz Collector-Base Capacitance 3 pF CBO CB V =-5V, I =-200A CE C Noise Figure NF 2 10 dB R =2K, f=1KHz, f=200Hz S Note: 2. Short Duration Pulse Test to Minimize Self-heating Effect. Rev.3-1-01012019 2/4 MCCSEMI.COM

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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