LMB12S-TP

THRU Features 1 PS 6XUIDFH 0RXQW Halogen Free. Green Device (Note 2) 6FKRWWN %ULGJH Moisture Sensitivity Level 1 WR 9ROWV Maximum Ratings : -55C to +150C : -55C to +150C 7 SLFDO 7KHUPDO 5HVLVWDQFH & : -XQFWLRQ WR /HDG 7 SLFDO 7KHUPDO 5HVLVWDQFH 80& : -XQFWLRQ WR Ambient LMBS-1 Maximum Maximum Maximum DC Device Recurrent MCC RMS Blocking Marking Peak Reverse Part Number Voltage Voltage Voltage C E LMB12S LB12S 20V 14V 20V B D LMB14S LB14S 40V 28V 40V LMB16S LB16S 60V 42V 60V F G LMB18S LB18S 80V 56V 80V H 100V 70V 100V J LMB110S LB110S K L (OHFWULFDO &KDUDFWHULVWLFV & 8QOHVV 2WKHUZLVH 6SHFLHG M T =80&(Note 3) Average Rectified A I F(AV) 1.0A DIMENSIONS Output Current T =40&(Note 4) A INCHES MM DIM NOTE Peak Forward MIN MAX MIN MAX I 30A 8.3ms, +alf ine6 FSM A 0.197 0.205 4.90 5.20 Surge Current 0.024 0.60 B Maximum C --- 0.059 --- 1.50 D 0.024 0.032 0.60 0.80 Instantaneous E --- 0.189 --- 4.80 Forward Voltage F 0.150 0.165 3.80 4.20 I = 0.5A V 0.55V FM LMB12S~LMB14S F G --- 0.209 --- 5.30 LMB16S 0.65V T = 25C A H 0.236 0.252 6.00 6.60 LMB18S~LMB110S 0.85V J 0.177 0.185 4.30 4.70 K 0.0009 0.004 0.02 0.21 Maximum DC L 0.006 0.012 0.15 0.30 Reverse Current Dt T = 25C I 0. mA M 0.017 0.031 0.25 0. 0 R A Rated DC Blocking Suggested Solder Pad Layout Voltage 0.036 (0.9 mm) Typical Junction Measured at C 50pF J Capacitance 1.0MHz, V =4.0V R 0.126 (3.2mm) 0.225 (5.72mm) Note: 1. High Temperature Solder Exemption Applied, ee EU Directive 6 Annex Notes 7D 0.060 (1.5mm) 2. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 0.161 3 On lumina ubstrate,6 6ee )ig 1. (4.1mm) 4 On *lass-epoxi 6 ubstrate, 6 ee ) g 1. Rev.3-5-08132021 1/ MCCSEMI.COM 6WRUDJH 7HPSHUDWXUH 5DQJH 2SHUDWLQJ -XQFWLRQ 7HPSHUDWXUH 5DQJH 5HFWLILHU (SR 0HHWV 8/ 9 )ODPPDELOLW 5DWLQJ &RPSOLDQW 6HH 2UGHULQJ ,QIRUPDWLRQ 3 6XIIL HVLJQDWHV /HDG )UHH )LQLVK 5R+6 &RPSOLDQW 1RWH /0% 6 /0% 6/0% 6 7+58 /0% 6 Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current 1.2 35 30 1.0 25 0.8 20 0.6 On Glass-epoxi Substrate 15 0.4 10 On Alumina Substrate 0.2 5 8.3 ms Single Half Sine-Wave 0.0 0 0 25 50 75 100 125 150 1 10 100 Ambient Temperature (C) 1XPEHU RI & FOHV DW + Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Instantaneous Forward Characteristics 10 10 T =125C T =125C A A 1 1 T =75C T =75C 0.1 0.1 A A T =25C T =25C A A LMB12S~LMB14S LMB16S 0.01 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Instantaneous Forward Voltage (V) Instantaneous Forward Voltage (V) Fig. 5 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Reverse Leakage Characteristics 10 10000 5 T =125C A T =125C A 2 1000 1 0.5 T =75C A 100 0.2 0.1 T =75C A 10 0.05 T =25C A 0.02 T =25C A LMB18S~LMB110S LMB12S~LMB14S 0.01 1 20 40 60 80 100 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Rev.3-5-08132021 2/ MCCSEMI.COM Average Forward Current (A) Instantaneous Forward Current (A) Instantaneous Forward Current (A) Instantaneous Forward Current (A) Instantaneous Reverse Current (A) Peak Forward Surge Current (A) &XUYH &KDUDFWHULVWLFV &XUYH &KDUDFWHULVWLFV