MMBT3906HE3 Features Halogen Free.Gree Device (Note 1) AEC-Q101 Qualified Moisture Sensitivity Level 1 PNP Epoxy Meets UL 94 V-0 Flammability Rating General Purpose Lead Free Finish/RoHS Compliant Suffix Designates RoHS Amplifier Compliant. See Ordering Information) Maximum Ratings SOT-23 Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 A Thermal Resistance: 417/W Junction to Ambient D Parameter Symbol Rating Unit V B Collector-Base Voltage -40 V C CBO V Collector-Emitter Voltage -40 V CEO F E V Emitter-Base Voltage -5 V EBO Collector Current I -200 mA C Power Dissipation P 300 mW D G H J L Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, K <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.110 0.120 2.80 3.04 Internal Structure B 0.083 0.104 2.10 2.64 C 0.047 0.055 1.20 1.40 D 0.034 0.041 0.85 1.05 E 0.067 0.083 1.70 2.10 F 0.018 0.024 0.45 0.60 G 0.01 0.15 0.0004 0.006 Marking: 2A H 0.035 0.043 0.90 1.10 J 0.003 0.007 0.08 0.18 K 0.014 0.020 0.35 0.51 L 0.007 0.020 0.20 0.50 Suggested Solder Pad Layout 0.031 0.800 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-2-08012020 1/5 MCCSEMI.COMMMBT3906HE3 Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V I =-10A, I =0 Collector-Base Breakdown Voltage -40 V (BR)CBO C E (2) Collector-Emitter Breakdown Voltage V -40 V I =-1mA, I =0 (BR)CEO C B V I =-10A, I =0 Emitter-Base Breakdown Voltage -5 V (BR)EBO E C I V =-40V, I =0 Collector Cutoff Current -100 nA CBO CB E I V =-30V, V =-3V Collector Cutoff Current -50 nA CEX CE BE Emitter-Base Cutoff Current I -100 nA V =-5V, I =0 EBO EB C h V =-1V, I =-10mA FE1 100 300 CE C (2) DC Current Gain h V =-1V, I =-50mA 60 FE2 CE C V =-1V, I =-100mA h 30 CE C FE3 -0.25 V I =-10mA, I =-1mA C B V Collector-Emitter Saturation Voltage CE(sat) -0.4 V I =-50mA, I =-5mA C B I =-10mA, I =-1mA -0.65 -0.85 V C B Base-Emitter Saturation Voltage V BE(sat) I =-50mA, I =-5mA -0.95 V C B Transition Frequency f 250 MHz V =-20V, I =-10mA, f=100MHz T CE C Output Capacitance C 4.5 pF V =-5V, I =0, f=1MHz, obo CB E C V =-0.5V, I =0, f=1MHz, Input Capacitance 10 pF ibo BE C Noise Figure NF 4.0 dB V =-5V, I =-100A, R =1K, CE C S f=1.0KHz ) V =-3V, I =-10mA t Delay Time 35 ns CC C d V =-0.5V, I =-1mA BE B1 Rise Time t 35 ns r t Storage Time 225 ns s V =-3V, I =-10mA CC C t I =I =-1mA Fall Time 75 ns f B1 B2 Note: 2. Pulse Width 300s, Duty Cycle 2.0% Rev.3-2-08012020 2/5 MCCSEMI.COM