MMST3906-TP Micro Commercial Components (MCC)

MMST3906-TP electronic component of Micro Commercial Components (MCC)
MMST3906-TP Micro Commercial Components (MCC)
MMST3906-TP Bipolar Transistors - BJT
MMST3906-TP  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MMST3906-TP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMST3906-TP Bipolar Transistors - BJT are a product manufactured by Micro Commercial Components (MCC). We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. MMST3906-TP
Manufacturer: Micro Commercial Components (MCC)
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 40 V 200 mA 300MHz 200 mW Surface Mount SOT-323
Datasheet: MMST3906-TP Datasheet (PDF)
Price (USD)
9000: USD 0.0144 ea
Line Total: USD 129.6 
Availability : 0
  
QtyUnit Price
9000$ 0.0144
18000$ 0.0142

Availability 0
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 12000
Multiples : 3000
QtyUnit Price
12000$ 0.0229
12000$ 0.0226
15000$ 0.0204
24000$ 0.0192
30000$ 0.0186
75000$ 0.018
150000$ 0.017


Availability 0
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.0438
6000$ 0.0379
15000$ 0.033
30000$ 0.0297
75000$ 0.0264
150000$ 0.0219


Availability 0
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.2544
10$ 0.2163
100$ 0.1179
500$ 0.0726
1000$ 0.0495


Availability 0
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.2544
10$ 0.2163
100$ 0.1179
500$ 0.0726
1000$ 0.0495


Availability 0
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.1859
10$ 0.1149
100$ 0.071
500$ 0.0487
3000$ 0.0307
6000$ 0.0295
24000$ 0.0273


Availability 0
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 9000
Multiples : 3000
QtyUnit Price
9000$ 0.0314
24000$ 0.0284
30000$ 0.027
75000$ 0.0251
150000$ 0.0229


Availability 0
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 9000
Multiples : 3000
QtyUnit Price
9000$ 0.0144
18000$ 0.0142

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMST3906-TP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMST3906-TP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MMST3906 Features Epitaxial Planar Die Construction Complementary NPN Type Available MMST3904 PNP Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Small Signal Epoxy Meets UL 94 V-0 Flammability Rating Transistors Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 SOT-323 Parameter Symbol Rating Unit A V Collector-Base Voltage -0 V CBO D V Collector-Emitter Voltage - 0 V CEO V C Emitter-Base Voltage -5 V B EBO (2) Collector Current I - 00 mA C (2) Collector Power Dissipation P 200 mW C F E H J Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, G <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. K 2. Valid provided that terminals are kept at ambient temperature. L DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX Marking: K5N A 0.071 0.087 1.80 2.20 B 0.045 0.053 1.15 1.35 C 0.083 0.096 2.10 2.45 Internal Structure D 0.026 0.65 TYP. E 0.047 0.055 1.20 1.40 F 0.012 0.016 0.30 0.40 C G 0.000 0.004 0.00 0.10 H 0.035 0.044 0.90 1.10 J 0.002 0.010 0.05 0.25 K 0.006 0.016 0.15 0.40 E B L 0.010 0.018 0.26 0.46 4VHHFTUFE 4PMEFS 1BE -BZPVU 0.70 (mm) 0.90 1.90 0.65 0.65 Rev.3-3-12012020 1/4 MCCSEMI.COMMMST3906 Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions (3) V -40 V I =-10A, I =0 (BR)CBO C E Collector-Base Breakdown Voltage (3) V I =-1mA, I =0 -40 V (BR)CEO C B Collector-Emitter Breakdown Voltage (3) V I =-10A, I =0 -5 V Emitter-Base Breakdown Voltage (BR)EBO E C (3) I -50 nA V =-30V, V =-3V Collector Cutoff Current CEX CE EB(OFF) (3) I -50 nA V =-30V, V =-3V Base Cutoff Current BL CE EB(OFF) h V =-1V, I =-0.1mA 60 FE(1) CE C h V =-1V, I =-1mA 80 FE(2) CE C (3) h 100 300 V =-1V, I =-10mA DC Current Gain FE(3) CE C h 60 V =-1V, I =-50mA FE(4) CE C h V =-1V, I =-500mA 30 FE(5) CE C I =-10mA, I =-1mA -0.2 V C B (3) V Collector-Emitter Saturation Voltage CE(sat) I =-50mA, I =-5mA -0.3 V C B -0.65 -0.85 V I =-10mA, I =-1mA C B (3) V Base-Emitter Saturation Voltage BE(sat) I =-50mA, I =-5mA -0.95 V C B C V =-5V, I =0, f=1MHz Output Capacitance 4.5 pF cbo CB E C V =-0.5V, I =0, f=1MHz Input Capacitance 10 pF ibo EB C Input Impedance h 2 12 K ie 4 Voltage Feedback Ratio h 0.1 10 re x10 V =-10V, I =-1mA, f=1KHz CE C h Small Signal Current Gain 100 400 fe h Output Admittance 3 60 uS oe Transition Frequency f 300 MHz V =-20V, I =-10mA, f=100MHz T CE C V =-5V, I =-0.1mA CE C Noise Figure NF 4 dB R =1K, f=1KHz S t Delay Time 35 ns V =-3V, I =-10mA d CC C V =-0.5V, I =-1mA Rise Time t 35 ns BE(OFF) B1 r Storage Time t 225 ns V =-3V, I =-10mA s CC C t I =I =-1mA Fall Time 75 ns f B1 B2 Note: 3.Pulse Width 300s, Duty Cycle2.0% Rev.3-3-12012020 2/4 MCCSEMI.COM

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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