X-On Electronics has gained recognition as a prominent supplier of MPSA93-AP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MPSA93-AP Bipolar Transistors - BJT are a product manufactured by Micro Commercial Components (MCC). We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MPSA93-AP Micro Commercial Components (MCC)

MPSA93-AP electronic component of Micro Commercial Components (MCC)
MPSA93-AP Micro Commercial Components (MCC)
MPSA93-AP Bipolar Transistors - BJT
MPSA93-AP  Semiconductors

Images are for reference only
See Product Specifications
Part No. MPSA93-AP
Manufacturer: Micro Commercial Components (MCC)
Category: Bipolar Transistors - BJT
Description: Micro Commercial Components (MCC) Bipolar Transistors - BJT -500mA -200V
Datasheet: MPSA93-AP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8584: USD 0.0303 ea
Line Total: USD 260.1 
Availability - 8512
Ship by Wed. 18 Jun to Tue. 24 Jun
MOQ: 8584  Multiples: 1
Pack Size: 1
Availability Price Quantity
8512
Ship by Wed. 18 Jun to Tue. 24 Jun
MOQ : 8584
Multiples : 1
8584 : USD 0.0303

8512
Ship by Wed. 18 Jun to Tue. 24 Jun
MOQ : 8584
Multiples : 1
8584 : USD 0.0303

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MPSA93-AP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MPSA93-AP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MPSA93 Features Complementary to MPSA43 Halogen Free Available Upon Request By Adding Suffix-H Epitaxial Planar Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Transistor Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Thermal Resistance: 200/W Junction to Ambient Parameter Symbol Rating Unit V Collector-Base Voltage -200 V CBO Collector-Emitter Voltage V -200 V CEO TO-92 Emitter-Base Voltage V -5 V EBO Continuous Collector Current I -500 mA C Power Dissipation P 625 mW D A E Marking:A93 Internal Structure B 1 2 3 G C C B 1.EMITTER 2.BASE 3.COLLECTOR E D DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.169 0.185 4.30 4.70 B 0.169 0.185 4.30 4.70 C 0.500 ----- 12.70 ----- D 0.015 0.022 0.38 0.55 E 0.130 0.146 3.30 3.70 0.095 0.105 2.42 2.67 Straight Lead G 0.173 0.220 4.40 5.60 Bent Rev.3-1-01012019 1/4 MCCSEMI.COMMPSA93 Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V -200 V I =-100A, I =0 (BR)CBO C E Collector-Emitter Breakdown Voltage* V -200 V I =-1mA, I =0 (BR)CEO C B Emitter-Base Breakdown Voltage V -5 V I =-100A, I =0 (BR)EBO E C Collector Cut-off Current I -0.25 A V =-150V, I =0 CBO CB E Emitter Cut-off Current I -0.1 A V =-3V, I =0 EBO EB C h V =-10V, I =-1mA 25 FE(1) CE C h V =-10V, I =-10mA DC Current Gain* 40 FE(2) CE C h V =-10V, I =-30mA 25 FE(3) CE C V I =-20mA, I =-2mA Collector-Emitter Saturation Voltage* -0.5 V CE(sat) C B V I =-20mA, I =-2mA Base-Emitter Saturation Voltage* -0.9 V BE(sat) C B f V =-20V, I =-10mA, f=100MHz Transition Frequency 50 MHz T CE C C V =-20V, I =0,f=1MHz Collector Output Capacitance 8pF ob CB E *.Pulse test: Pulse Width300s,Duty Cycle2.0%. Rev.3-1-01012019 2/4 MCCSEMI.COM

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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