SI2302 Features Rugged and Reliable Lead Free Product is Acquired High Dense Cell Design for Extremely Low R N-Channel DS(ON) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Enhancement Mode Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant Suffix Designates RoHS Field Effect Transistor Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range: -55C to +150C Storage Temperature Range: -55C to +150C SOT-23 Thermal Resistance: 100C/W Junction to Ambient A Parameter Symbol Rating Unit D V 3 Drain-Source Voltage 20 V DS B C Gate-Source Voltage V 8 V GS 1 2 I 3.0 A Drain Current-Continuous D F E (Note 2) Drain Current-Pulsed I 10 A DM Power Dissipation P 1.25 W D G H J Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, L <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. K DIMENSIONS Internal Structure INCHES MM DIM NOTE MIN MAX MIN MAX D A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 1. GATE C 0.047 0.055 1.20 1.40 2. SOURCE D 0.034 0.041 0.85 1.05 3. DRAIN G E 0.067 0.083 1.70 2.10 F 0.018 0.024 0.45 0.60 Marking: S2 G 0.01 0.15 0.0004 0.006 S H 0.035 0.043 0.90 1.10 J 0.003 0.007 0.08 0.18 K 0.012 0.020 0.30 0.51 L 0.007 0.020 0.20 0.50 Suggested Solder Pad Layout 0.031 0.800 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-3-12012020 1/4 MCCSEMI.COMSI2302 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Static Characteristics V V =0V, I =10A Drain-Source Breakdown Voltage 20 V (BR)DSS GS D (Note3) Gate-Threshold Voltage V V =V , I =50A V 0.65 1.2 GS(th) DS GS D I V = 8V, V =0V Gate-Body Leakage Current 100 nA GSS GS DS Zero Gate Voltage Drain Current I V =20V, V =0V 1 A DSS DS GS V =4.5V, I =3.6A 55 72 GS D m (Note 4) Drain-Source On-Resistance R DS(on) V =2.5V, I =3.1A 82 110 GS D (Note 4) 8.5 g V =5V, I =3.6A Forward Transconductance S FS DS D (Note 5) Dynamic Characteristics C Input Capacitance iss 237 C V =10V,V =0V, f=1MHz pF 120 Output Capacitance oss DS GS Reverse Transfer Capacitance C 45 rss (Note 5) Switching Characteristics t d(on) 23 45 Turn-On Delay Time V =10V, V =4.5V, t DD GS 11 30 r Turn-On Rise Time I =3.6A, R =6 D GEN ns t 34 70 d(off) Turn-Off Delay Time t 36 70 f Turn-Off Fall Time Q 6 10 g Total Gate Charge V =10V, V =4.5V, DS GS Q 1.4 gs nC Gate-Source Charge I =3.6A D Q 1.8 gd Gate-Drain Charge Drain-Source Diode Characteristics and Maximum Ratings (Note4) Diode Forward Voltage V V =0V, I =0.94A 1.2 V SD GS S (Note3) 0.94 Drain-Source Diode Forward Current I A S Notes: 2. Repetitive Rating : Pulse Width Iimited By Maximum Junction Temperature. 3. Surface Mounted on FR4 Board, t < 10 sec. 4. Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. 5. Guaranteed By Design, Not Subject to Production Testing. Rev.3-3-12012020 2/4 MCCSEMI.COM