SI2304 Features High Dense Cell Design for Extremely Low R DS(ON) Voltage Controlled Small Signal Switch Surface Mount Package Epoxy Meets UL 94 V-0 Flammability Rating N-Channel MOSFET Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range: -55C to +150C Storage Temperature: -55C to +150C SOT-23 Thermal Resistance: 125C/W Junction to Ambient A Parameter Symbol Rating Unit D V Drain -source Voltage 30 V DS 3 Gate -Source Voltage V 20 V GS B C I 2. 5 A Drain Current-Continuous D 1 2 F E Drain Current-Pulse I 10 A DM Power Dissipation P 1. 0 W D G H J Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, L <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. K DIMENSIONS Internal Structure INCHES MM DIM NOTE MIN MAX MIN MAX D A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 1. * 7 E C 0.047 0.055 1.20 1.40 2. D 0.034 0.041 0.85 1.05 3. E 0.067 0.083 1.70 2.10 G F 0.018 0.024 0.45 0.60 Marking: S4 G 0.01 0.15 0.0004 0.006 S H 0.035 0.043 0.90 1.10 J 0.003 0.007 0.08 0.18 K 0.012 0.020 0.30 0.51 L 0.00 7 0.020 0.20 0.50 Suggested Solder Pad Layout 0.031 0.800 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-4-08012020 1/4 MCCSEMI.COM 5 ,1 6285&(SI2304 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Static Characteristics V V =0V, I =250A Drain-Source Breakdown Voltage 30 V (BR)DSS GS D Gate-Threshold Voltage V V =V , I =250A V 1.0 2.0 GS(th) DS GS D I V = 20V, V =0V Gate-Body Leakage Current 100 nA GSS GS DS Zero Gate Voltage Drain Current I V =30V, V =0V 1 A DSS DS GS V =10V, I =2.5A 65 GS D m Drain-Source On-Resistance R DS(on) V =4.5V, I =2.0A 90 GS D 4.6 g V =4.5V, I =2.5A Forward Transconductance S FS DS D Diode Forward Voltage V V =0V, I =1.25A 1.2 V SD GS S Dynamic Characteristics C Input Capacitance iss 2 40 C V =15V,V =0V, f=1MHz pF 1 1 0 Output Capacitance oss DS GS Reverse Transfer Capacitance C 17 rss Switching Characteristics Total Gate Charge Q 4.5 10 g V =15V,V =10V,I =2.5A Q nC Gate-Source Charge D S GS D 0.8 gs Q Gate-Drain Charge 1.0 gd t d(on) 8 20 Turn-On Delay Time V =15V,R =15,V =10V, t D D L G EN 30 r 12 Turn-On Rise Time I =1A,R =6 D G ns t 35 d(off) 17 Turn-Off Delay Time t 8 20 f Turn-Off Fall Time Rev.3-5-12012020 2/4 MCCSEMI.COM