SI2305B Features Low R DS(ON) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1) P-Channel MOSFET Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range: -55C to +150C Storage Temperature: -55C to +150C SOT-23 (Note 2) Thermal Resistance: 90C/W Junction to Ambient A Parameter Symbol Rating Unit D V 3 Drain-Source Voltage -20 V DS B Gate-Source Voltage V 10 V C GS 1 2 I -4.2 A Drain Current-Continuous D F E (Note 2) Drain Current-Pulse I -21 A DM Power Dissipation P 1.4 W D G H J Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, L <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. K M DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX Internal Structure A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 D C 0.047 0.055 1.20 1.40 D 0.034 0.041 0.85 1.05 1. * 7 E E 0.067 0.083 1.70 2.10 2. F 0.018 0.024 0.45 0.60 3. G G 0.0004 0.006 0.01 0.15 H 0.035 0.043 0.90 1.10 Marking:S5 B S J 0.003 0.007 0.08 0.18 K 0.012 0.020 0.30 0.51 L 0.020 0.50 0.00 7 0.20 M 0.022 REF 0.55 REF Suggested Solder Pad Layout 0.031 0.800 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-5- 10292021 1/4 MCCSEMI.COM 5 ,1 6285&(SI2305B ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Static Characteristics V V =0V, I =-250A Drain-Source Breakdown Voltage -20 V (BR)DSS GS D Gate-Threshold Voltage V V =V , I =-250A -0.5 -0.9 V GS(th) DS GS D I V =10V, V =0V Gate-Body Leakage Current 100 nA GSS GS DS Zero Gate Voltage Drain Current I V =-20V, V =0V -1 A DSS DS GS V =-4.5V, I =-4A 30 39 GS D (Note 4) R V =-2.5V, I =-3A 38 49 m Drain-Source On-Resistance DS(on) GS D V =-1.8V, I =-2A 51 63 GS D (Note 4) g V =-5V, I =-4.1A 6 S Forward Tranconductance FS DS D Dynamic Characteristics (Note 2,5) C 740 Input Capacitance iss (Note 2,5) C V =-4V,V =0V, f=1MHz 290 pF oss DS GS Output Capacitance (Note 2,5) C 190 Reverse Transfer Capacitance rss V =-4V,V =-4.5V,I =-4.1A 7.8 15 DS GS D (Note 2) Q Total Gate Charge g 4.5 9 nC (Note 2) 1.2 Q V =-4V,V =-2.5V,I =-4.1A Gate-Source Chage gs DS GS D (Note 2) Q 1.6 Gage-Drain Charge gd (Note 2,5) 1.4 7 14 R f=1MHz g Gate Resistance (Note 2,5) t 13 20 Turn-On Delay Time d(on) (Note 2,5) t 35 53 r Turn-On Rise Time V =-4V,V =-4.5V,R =1.2, DD GEN L ns (Note 2,5) I =-3.3A,R =1 D G t 32 48 Turn-Off Delay Time d(off) (Note 2,5) t 10 20 f Turn-Off Fall Time (Note 2,5) t 5 10 Turn-On Delay Time d(on) (Note 2,5) V =-4V,V =-8V,R =1.2, t DD GEN L 11 17 r Turn-On Rise Time ns I =-3.3A,R =1 D G (Note 2,5) t 22 33 Turn-Off Delay Time d(off) (Note 2,5) t 16 24 f Turn-Off Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode o I -4.2 T =25 C S C Current A (Note 4) I -10 SM Pulse Diode Forward Current Body Diode Voltage V I =-3.3A -0.8 -1.2 V SD F Note: 2. Guaranteed by Design,Not Subject to Production Testing. 3. Repetitive Rating: Pulse Width Limited by Max. Junction Temperature. 4. Pulse Test: Pulse Width300s,Duty Cycle2%. 5. These Parameters Have No Way to Verify. Rev.3- 5-1029 2021 2/4 MCCSEMI.COM