Product Information

M29W800DB70ZE6E

M29W800DB70ZE6E electronic component of Micron

Datasheet
NOR Flash Parallel 3V/3.3V 8M-bit 1M x 8/512K x 16 70ns 48-Pin TFBGA Tray

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

204: USD 1.0078 ea
Line Total: USD 205.59

0 - Global Stock
MOQ: 204  Multiples: 204
Pack Size: 204
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 204
Multiples : 204
204 : USD 1.0078

     
Manufacturer
Product Category
Mounting Style
Package / Case
Interface Type
Organisation
Timing Type
Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Access Time Max
Address Bus
Boot Type
Cell Type
Operating Temp Range
Pin Count
Program/Erase Volt Typ
Density
Operating Temperature Classification
Programmable
Rad Hardened
Operating Supply Voltage Typ
Deleted
LoadingGif

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M29W800DT M29W800DB 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY SUPPLY VOLTAGE Figure 1. Packages V = 2.7V to 3.6V for Program, Erase CC and Read ACCESS TIMES: 45, 70, 90ns PROGRAMMING TIME 10s per Byte/Word typical 19 MEMORY BLOCKS 1 Boot Block (Top or Bottom Location) SO44 (M) 2 Parameter and 16 Main Blocks PROGRAM/ERASE CONTROLLER Embedded Byte/Word Program algorithms ERASE SUSPEND and RESUME MODES Read and Program another Block during Erase Suspend TSOP48 (N) UNLOCK BYPASS PROGRAM COMMAND 12 x 20mm Faster Production/Batch Programming TEMPORARY BLOCK UNPROTECTION MODE FBGA COMMON FLASH INTERFACE 64 bit Security Code LOW POWER CONSUMPTION TFBGA48 (ZA) Standby and Automatic Standby 6 x 9 mm 100,000 PROGRAM/ERASE CYCLES per BLOCK FBGA ELECTRONIC SIGNATURE Manufacturer Code: 0020h Top Device Code M29W800DT: 22D7h TFBGA48 (ZE) Bottom Device Code M29W800DB: 6 x 8mm 225Bh September 2004 1/42M29W800DT, M29W800DB TABLE OF CONTENTS FEATURES SUMMARY . 1 Figure 1. Packages 1 SUMMARY DESCRIPTION . 5 Figure 2. Logic Diagram 5 Table 1. Signal Names 5 Figure 3. SO Connections . 6 Figure 4. TSOP Connections 6 Figure 5. TFBGA Connections (Top view through package) 7 Figure 6. Block Addresses (x8) . 8 Figure 7. Block Addresses (x16) 9 SIGNAL DESCRIPTIONS . 10 Address Inputs (A0-A18) . 10 Data Inputs/Outputs (DQ0-DQ7) . 10 Data Inputs/Outputs (DQ8-DQ14) 10 Data Input/Output or Address Input (DQ15A-1) 10 Chip Enable (E) 10 Output Enable (G) 10 Write Enable (W) . 10 Reset/Block Temporary Unprotect (RP) 10 Ready/Busy Output (RB) . 10 Byte/Word Organization Select (BYTE) 10 V Supply Voltage . 10 CC V Ground . 10 SS BUS OPERATIONS 11 Bus Read . 11 Bus Write . 11 Output Disable . 11 Standby 11 Automatic Standby 11 Special Bus Operations 11 Electronic Signature . 11 Block Protection and Blocks Unprotection 11 Table 2. Bus Operations, BYTE = V 11 IL Table 3. Bus Operations, BYTE = V 12 IH COMMAND INTERFACE . 12 Read/Reset Command . 12 Auto Select Command . 12 Program Command . 12 Unlock Bypass Command 13 2/42

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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