Product Information

M29W800DB70ZE6F

Name: M29W800DB70ZE6F
Brand: Micron
SKU: M29W800DB70ZE6F_Micron
Availability: OutOfStock
Rating: 5 (11 reviews)

M29W800DB70ZE6F electronic component of Micron

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Datasheet

NOR Flash Parallel 3V/3.3V 8M-bit 1M x 8/512K x 16 70ns 48-Pin TFBGA T/R

Manufacturer: Micron

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

2500: USD 1.3445 ea
Line Total: USD 3361.25

0 - Global Stock

MOQ: 2500 Multiples: 2500
Pack Size: 2500

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 17 May to Thu. 23 May MOQ : 2500 Multiples : 2500 M29W800DB70ZE6F Micron	2500 : USD 1.3445

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Additional Infomation About Product

M29W800DT M29W800DB 8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory Features Supply voltage V = 2.7 V to 3.6 V for program, erase CC and read Access times: 45, 70, 90 ns Programming time 10 s per byte/word typical SO44 (M) 19 memory blocks 1 boot block (top or bottom location) 2 parameter and 16 main blocks Program/erase controller Embedded byte/word program algorithms Erase suspend and resume modes TSOP48 (N) Read and program another block during 12 x 20 mm erase suspend Unlock bypass program command FBGA Faster production/batch programming Temporary block unprotection mode TFBGA48 (ZE) Common flash interface 6 x 8 mm 64-bit security code Low power consumption Standby and automatic standby 100,000 program/erase cycles per block Electronic signature Manufacturer code: 0020h Top device code M29W800DT: 22D7h Bottom device code M29W800DB: 225Bh April 2009 Rev 11 1/52 www.numonyx.com 1Contents M29W800DT, M29W800DB Contents 1 Description . 6 2 Signal descriptions . 12 2.1 Address inputs (A0-A18) . 12 2.2 Data inputs/outputs (DQ0-DQ7) 12 2.3 Data inputs/outputs (DQ8-DQ14) . 12 2.4 Data input/output or address input (DQ15A-1) . 12 2.5 Chip enable (E) 12 2.6 Output enable (G) . 12 2.7 Write enable (W) . 13 2.8 Reset/block temporary unprotect (RP) . 13 2.9 Ready/busy output (RB) 13 2.10 Byte/word organization select (BYTE) . 13 2.11 V supply voltage 13 CC 2.12 V ground 14 SS 3 Bus operations 15 3.1 Bus read 15 3.2 Bus write 15 3.3 Output disable . 15 3.4 Standby 15 3.5 Automatic standby 15 3.6 Special bus operations . 16 3.6.1 Electronic signature 16 3.6.2 Block protection and blocks unprotection . 16 4 Command interface . 17 4.1 Read/Reset command . 17 4.2 Auto Select command . 17 4.3 Program command 17 4.4 Unlock Bypass command . 18 4.5 Unlock Bypass Program command . 18 2/52

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

Micron may also be referenced as

EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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Manufacturer Micron Micron
Product Category NOR Flash NOR Flash
Mounting Style Surface Mount Surface Mount
Package / Case TFBGA TFBGA
Interface Type Parallel Parallel
Organisation 1M/512K 1M/512K
Timing Type Asynchronous Asynchronous
Data Bus Width 8/16 (B) 8/16 (B)
Supply Voltage - Min 2.7 V 2.7 V
Supply Voltage - Max 3.6 V 3.6 V
Supply Current - Max 10 mA 10 mA
Minimum Operating Temperature - 40 C - 40 C
Maximum Operating Temperature 85 C 85 C
Packaging Tape And Reel Tape And Reel
Access Time Max 70 ns 70 ns
Address Bus 20/19(B) 20/19(B)
Boot Type Bottom Bottom
Cell Type Nor Nor
Operating Temp Range - 40 C To 85 C - 40 C To 85 C
Pin Count 48 48
Program/Erase Volt Typ 2.7 To 3.6(V) 2.7 To 3.6(V)
Density 8388608(Bit) 8388608(Bit)
Operating Temperature Classification industrial industrial
Programmable Yes Yes
Rad Hardened No No
Operating Supply Voltage Typ 3/3.3 V 3/3.3 V
Deleted Compliant Compliant