Product Information

MT18HTF25672PDZ-80EH1

MT18HTF25672PDZ-80EH1 electronic component of Micron

Datasheet
DRAM Module DDR2 SDRAM 2Gbyte 240RDIMM

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 179.3727 ea
Line Total: USD 179.37

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1
1 : USD 179.3727
10 : USD 159.4481
50 : USD 151.0534
100 : USD 95.6663

     
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1GB, 2GB, 4GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM Features DDR2 SDRAM RDIMM MT18HTF12872PDZ 1GB MT18HTF25672PDZ 2GB MT18HTF51272PDZ 4GB Figure 1: 240-Pin RDIMM (MO-237 R/C G) Features 240-pin, registered dual in-line memory module Module height: 30mm (1.181in) Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 1GB (128 Meg x 72), 2GB (256 Meg x 72), 4GB (512 Meg x 72) Supports ECC error detection and correction V = V = +1.8V DD DDQ Options Marking V = 1.73.6V DDSPD Parity P JEDEC-standard 1.8V I/O (SSTL 18-compatible) Operating temperature Differential data strobe (DQS, DQS ) option Commercial (0C T +70C) None A 4n-bit prefetch architecture 1 Industrial (40C T +85C) T A Dual rank Package 240-pin DIMM (halogen-free) Z Multiple internal device banks for concurrent 2 Frequency/CL operation 2.5ns CL = 5 (DDR2-800) -80E Programmable CAS latency (CL) 2.5ns CL = 6 (DDR2-800) -800 Posted CAS additive latency (AL) 3.0ns CL = 5 (DDR2-667) -667 t WRITE latency = READ latency - 1 CK 1. Contact Micron for industrial temperature Notes: Programmable burst lengths (BL): 4 or 8 module offerings. Adjustable data-output drive strength 2. CL = CAS (READ) latency registered mode 64ms, 8192-cycle refresh will add one clock cycle to CL. On-die termination (ODT) Serial presence-detect (SPD) with EEPROM Gold edge contacts Halogen-free Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 (ns) (ns) (ns) -80E PC2-6400 800 800 533 400 12.5 12.5 55 -800 PC2-6400 800 667 533 400 15 15 55 -667 PC2-5300 667 553 400 15 15 55 -53E PC2-4200 553 400 15 15 55 -40E PC2-3200 400 400 15 15 55 PDF: 09005aef83d3d893 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 htf18c128 256 512x72pdz.pdf - Rev. E 01/13 EN 2009 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.1GB, 2GB, 4GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM Features Table 2: Addressing Parameter 1GB 2GB 4GB Refresh count 8K 8K 8K Row address 16K A 13:0 16K A 13:0 32K A 14:0 Device bank address 4 BA 1:0 8 BA 2:0 8 BA 2:0 Device configuration 512Mb (64 Meg x 8) 1Gb (128 Meg x 8) 2Gb (256 Meg x8) Column address 1K A 9:0 1K A 9:0 1K A 9:0 Module rank address 2 S 1:0 2 S 1:0 2 S 1:0 Table 3: Part Numbers and Timing Parameters 1GB 1 Base device: MT47H64M8, 512Mb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT18HTF12872PDZ-80E 1GB 128 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT18HTF12872PTZ-80E 1GB 128 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT18HTF12872PDZ-800 1GB 128 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT18HTF12872PTZ-800 1GB 128 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT18HTF12872PDZ-667 1GB 128 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5 MT18HTF12872PTZ-667 1GB 128 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Table 4: Part Numbers and Timing Parameters 2GB 1 Base device: MT47H128M8, 1Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT18HTF25672PDZ-80E 2GB 256 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT18HTF25672PTZ-80E 2GB 256 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT18HTF25672PDZ-800 2GB 256 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT18HTF25672PTZ-800 2GB 256 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT18HTF25672PDZ-667 2GB 256 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5 MT18HTF25672PTZ-667 2GB 256 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Table 5: Part Numbers and Timing Parameters 4GB 1 Base device: MT47H256M8, 2Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT18HTF51272PDZ-80E 4GB 512 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT18HTF51272PTZ-80E 4GB 512 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT18HTF51272PDZ-800 4GB 512 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT18HTF51272PTZ-800 4GB 512 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6 PDF: 09005aef83d3d893 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 htf18c128 256 512x72pdz.pdf - Rev. E 01/13 EN 2009 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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