Product Information

MT36JSZF1G72PDZ-1G1D1

MT36JSZF1G72PDZ-1G1D1 electronic component of Micron

Datasheet
DRAM Module DDR3 SDRAM 8Gbyte 240RDIMM Tray

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4000: USD 0.0391 ea
Line Total: USD 156.4

0 - Global Stock
MOQ: 4000  Multiples: 4000
Pack Size: 4000
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 4000
Multiples : 4000
4000 : USD 0.0391

0 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 4000
Multiples : 4000
4000 : USD 0.0391

0 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 4000
Multiples : 4000
4000 : USD 0.1669
8000 : USD 0.1397
24000 : USD 0.1081

0 - WHS 4


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 989
Multiples : 1
989 : USD 0.1666
1000 : USD 0.1629
3000 : USD 0.1593

     
Manufacturer
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Mounting
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Operating Temperature Min
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Main Category
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Operating Supply Voltage Min
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4GB, 8GB (x72, ECC, QR) 240-Pin Halogen-Free DDR3 RDIMM Features DDR3 SDRAM RDIMM MT36JSZF51272PDZ 4GB MT36JSZF1G72PDZ 8GB Figure 1: 240-Pin RDIMM (MO-269 R/C H) Features Module height: 30.0mm (1.181in) DDR3 functionality and operations supported as defined in the component data sheet 240-pin, registered dual in-line memory module (RDIMM) Fast data transfer rates: PC3-12800, PC3-10600, PC3-8500, or PC3-6400 4GB (512 Meg x 72), 8GB (1 Gig x 72) Options Marking V = 1.5V 0.075V DD 1 Operating temperature V = +3.0V to +3.6V DDSPD None Commercial (0C T +70C) A Supports ECC error detection and correction Industrial (40C T +85C) T A Nominal and dynamic on-die termination (ODT) for Package data, strobe, and mask signals 240-pin DIMM (halogen-free) Z Frequency/CAS latency Quad rank 1.25ns @ CL = 11 (DDR3-1600) -1G6 2 On-board I C temperature sensor with integrated 1.5ns @ CL = 9 (DDR3-1333) -1G4 serial presence-detect (SPD) EEPROM 1.87ns @ CL = 7 (DDR3 1066) -1G1 Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) Note: 1. Contact Micron for industrial temperature module offerings. Selectable BC4 or BL8 on-the-fly (OTF) Gold edge contacts Halogen-free Fly-by topology Terminated control, command, and address bus Full module heat spreader Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 11 CL = 10 CL = 9 CL = 8 CL = 7 CL = 6 CL = 5 (ns) (ns) (ns) -1G6 PC3-12800 1600 1333 1333 1066 1066 800 667 13.125 13.125 48.125 -1G4 PC3-10600 1333 1333 1066 1066 800 667 13.125 13.125 49.125 -1G1 PC3-8500 1066 1066 800 667 13.125 13.125 50.625 -1G0 PC3-8500 1066 800 667 15 15 52.5 -80C PC3-6400 800 800 12.5 12.5 50 -80B PC3-6400 800 667 15 15 52.5 PDF: 09005aef83950b83 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 JSZF36C512_1Gx72PDZ.pdf Rev. A 8/09 EN 2009 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.4GB, 8GB (x72, ECC, QR) 240-Pin Halogen-Free DDR3 RDIMM Features Table 2: Addressing Parameter 4GB 8GB Refresh count 8K 8K Row address 16K A[13:0] 32K A[14:0] Device bank address 8 BA[2:0] 8 BA[2:0] Device configuration 1Gb (128 Meg x 8) 2Gb (256 Meg x 8) Column address 2K A[9:0] 2K A[9:0] Module rank address 4 S#[3:0] 4 S#[3:0] Table 3: Part Numbers and Timing Parameters 4GB Modules 1 Base device: MT41J128M8, 1Gb DDR3 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT36JSZF51272PDZ-1G6__ 4GB 512 Meg x 72 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT36JSZF51272PTZ-1G6__ 4GB 512 Meg x 72 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT36JSZF51272PDZ-1G4__ 4GB 512 Meg x 72 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 MT36JSZF51272PTZ-1G4__ 4GB 512 Meg x 72 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 MT36JSZF51272PDZ-1G1__ 4GB 512 Meg x 72 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 MT36JSZF51272PTZ-1G1__ 4GB 512 Meg x 72 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 Table 4: Part Numbers and Timing Parameters 8GB Modules 1 Base device: MT41J256M8, 2Gb DDR3 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT36JSZF1G72PDZ-1G6__ 8GB 1 Gig x 72 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT36JSZF1G72PTZ-1G6__ 8GB 1 Gig x 72 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT36JSZF1G72PDZ-1G4__ 8GB 1 Gig x 72 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 MT36JSZF1G72PTZ-1G4__ 8GB 1 Gig x 72 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 MT36JSZF1G72PDZ-1G1__ 8GB 1 Gig x 72 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 MT36JSZF1G72PTZ-1G1__ 8GB 1 Gig x 72 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 1. The data sheet for the base device can be found on Microns Web site. Notes: 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT36JSZF51272PDZ-1G1F1. PDF: 09005aef83950b83 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 JSZF36C512_1Gx72PDZ.pdf Rev. A 8/09 EN 2009 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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