X-On Electronics has gained recognition as a prominent supplier of MT41K128M16JT-125 AUT:K dram across the USA, India, Europe, Australia, and various other global locations. MT41K128M16JT-125 AUT:K dram are a product manufactured by Micron. We provide cost-effective solutions for dram, ensuring timely deliveries around the world.

MT41K128M16JT-125 AUT:K Micron

MT41K128M16JT-125 AUT:K electronic component of Micron
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Part No.MT41K128M16JT-125 AUT:K
Manufacturer: Micron
Category:DRAM
Description: DRAM DDR3 2G 128MX16 FBGA
Datasheet: MT41K128M16JT-125 AUT:K Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.1295 ea
Line Total: USD 6.13

Availability - 1364
Ships to you between
Fri. 07 Jun to Tue. 11 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4 - WHS 1


Ships to you between
Mon. 10 Jun to Thu. 13 Jun

MOQ : 1
Multiples : 1
1 : USD 24.8089
10 : USD 22.6845
30 : USD 20.8963
100 : USD 19.3356

1364 - WHS 2


Ships to you between Fri. 07 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 6.1295
10 : USD 6.0835
100 : USD 5.8305
250 : USD 5.796
500 : USD 5.5315
1000 : USD 5.2785
2448 : USD 5.267
11016 : USD 4.922

     
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We proudly offer the MT41K128M16JT-125 AUT:K DRAM at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the MT41K128M16JT-125 AUT:K DRAM.

2Gb: x8, x16 Automotive DDR3L SDRAM Description 1.35V Automotive DDR3L SDRAM MT41K256M8 32 Meg x 8 x 8 banks MT41K128M16 16 Meg x 16 x 8 banks Output driver calibration Description 2 AEC-Q100 The 1.35V DDR3L SDRAM device is a low-voltage ver- PPAP submission sion of the 1.5V DDR3 SDRAM device. Refer to the 8D response time DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V compatible mode. Options Marking Configuration Features 256 Meg x 8 256M8 V = V = 1.35V (1.2831.45V) DD DDQ 128 Meg x 16 128M16 Backward-compatible to V = V = 1.5V 0.075V DD DDQ FBGA package (Pb-free) Differential bidirectional data strobe 78-ball FBGA (8mm x 10.5mm) DA 8n-bit prefetch architecture x8 Differential clock inputs (CK, CK ) 96-ball FBGA (8mm x 14mm) JT 8 internal banks x16 Nominal and dynamic on-die termination (ODT) Timing cycle time for data, strobe, and mask signals 1.07ns CL = 13 (DDR3-1866) -107 Programmable CAS (READ) latency (CL) 1.25ns CL = 11 (DDR3-1600) -125 Programmable posted CAS additive latency (AL) 1.5ns CL = 9 (DDR3-1333) -15E Programmable CAS (WRITE) latency (CWL) 1.875ns CL = 7 (DDR3-1066) -187E Fixed burst length (BL) of 8 and burst chop (BC) of 4 Product certification (via the mode register set MRS ) Automotive A Selectable BC4 or BL8 on-the-fly (OTF) Operating temperature Self refresh mode Industrial (40C T +95C) IT C Refresh maximum interval time at T temperature C Automotive (40C T +105C) AT C range 3 Ultra-high (40C T +125C) UT C 64ms at 40C to +85C Revision :K 32ms at +85C to +105C 16ms at +105C to +115C 1. Not all options listed can be combined to Notes: 8ms at +115C to +125C define an offered product. Use the part cat- Self refresh temperature (SRT) alog search on Automatic self refresh (ASR) 2Gb: x8, x16 Automotive DDR3L SDRAM Description Table 1: Key Timing Parameters (Continued) t t t t Speed Grade Data Rate (MT/s) Target RCD- RP-CL RCD (ns) RP (ns) CL (ns) 1 -15E 1333 9-9-9 13.5 13.5 13.5 -187E 1066 7-7-7 13.1 13.1 13.1 Notes: 1. Backward compatible to 1066, CL = 7 (-187E). 2. Backward compatible to 1333, CL = 9 (-15E). 3. Backward compatible to 1600, CL = 11 (-125). Table 2: Addressing Parameter 256 Meg x 8 128 Meg x 16 Configuration 32 Meg x 8 x 8 banks 16 Meg x 16 x 8 banks Refresh count 8K 8K Row address 32K A 14:0 16K A 13:0 Bank address 8 BA 2:0 8 BA 2:0 Column address 1K A 9:0 1K A 9:0 Figure 1: DDR3L Part Numbers ( DPSOH 3DUW 1XPEHU . 07 . 0 ,7 . 0HJ ,7 XWRPRWLYH EDOO PP PP )%* EDOO PP PP )%* -7 XWRPRWLYH W &. QV &/ W &. QV &/ W &. QV &/ W &. QV &/ 1. Not all options listed can be combined to define an offered product. Use the part catalog search on Note:

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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