Product Information

MT40A512M16LY-062E AAT:E

MT40A512M16LY-062E AAT:E electronic component of Micron

Datasheet
DRAM DDR4 8G 512MX16 FBGA

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 15.4031 ea
Line Total: USD 15.4

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1080
Multiples : 1080
1080 : USD 20.3087

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 15.4031
10 : USD 14.9782
30 : USD 14.5533
50 : USD 14.2346
100 : USD 13.8097
250 : USD 13.3848
500 : USD 12.9599

0 - WHS 3


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1080
Multiples : 1080
1080 : USD 12.1617
2160 : USD 12.0786
5400 : USD 11.7464

     
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8Gb: x8, x16 Automotive DDR4 SDRAM Features Automotive DDR4 SDRAM MT40A1G8 MT40A512M16 1 Options Marking Features Configuration V = V = 1.2V 60mV DD DDQ 1 Gig x 8 1G8 V = 2.5V 125mV/+250mV PP 512 Meg x 16 512M16 On-die, internal, adjustable V generation REFDQ 78-ball FBGA package (Pb-free) x8 1.2V pseudo open-drain I/O 8mm x 12mm Rev. B WE Refresh time of 8192-cycle at T temperature range: C 7.5mm x 11mm Rev. E SA 64ms at 40C to 85C 96-ball FBGA package (Pb-free) x16 32ms at 85C to 95C 8mm x 14mm Rev. B JY 16ms at 95C to 105C 7.5mm x 13.5mm Rev. E LY 8ms at 105C to 125C Timing cycle time 16 internal banks (x8): 4 groups of 4 banks each 0.625ns @ CL = 22 (DDR4-3200) -062E 8 internal banks (x16): 2 groups of 4 banks each 0.750ns @ CL = 18 (DDR4-2666) -075E 8n-bit prefetch architecture 0.833ns @ CL = 16 (DDR4-2400) -083E Programmable data strobe preambles Product certification Data strobe preamble training Automotive A Command/Address latency (CAL) Operating temperature Multipurpose register read and write capability Industrial (40 T 95C) IT C Write leveling Automotive (40 T 105C) AT C Self refresh mode 3 Ultra-high (40 T 125C) UT C Low-power auto self refresh (LPASR) Revision :B, :E Temperature controlled refresh (TCR) 1. Not all options listed can be combined to Notes: Fine granularity refresh define an offered product. Use the part Self refresh abort catalog search on 8Gb: x8, x16 Automotive DDR4 SDRAM Features Table 1: Key Timing Parameters 1 t t t Speed Grade Data Rate (MT/s) Target CL-nRCD-nRP AA (ns) RCD (ns) RP (ns) -062E 3200 22-22-22 13.75 13.75 13.75 -075E 2666 18-18-18 13.5 13.5 13.5 -083E 2400 16-16-16 13.32 13.32 13.32 Note: 1. Refer to the Speed Bin Tables for backward compatibility. Table 2: Addressing Parameter 1024 Meg x 8 512 Meg x 16 Number of bank groups 4 2 Bank group address BG[1:0] BG0 Bank count per group 4 4 Bank address in bank group BA[1:0] BA[1:0] Row addressing 64K (A[15:0]) 64K (A[15:0]) Column addressing 1K (A[9:0]) 1K (A[9:0]) 1 Page size 1KB 2KB Note: 1. Page size is per bank, calculated as follows: COLBITS Page size = 2 ORG/8, where COLBIT = the number of column address bits and ORG = the number of DQ bits. Figure 1: Order Part Number Example ([DPSOH3DUW1XPEHU % 7 07$*:(($$   ^ 0DUN *LJ[ * % ( 0DUN EDOOPP[PP)%*$ :( PP)%*$ EDOOPP[ 6$ EDOOPP[PP)%*$ -< ,QGXVWULDOWHPSHUDWXUH ,7 EDOOPP[PP)%*$ $XWRPRWLYH 3URGXFWFHUWLILFDWLRQ 0DUN W &. QV&/  $XWRPRWLYH $ W &. QV&/  CCMTD-1406124318-10419 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 8gb_auto_ddr4_dram.pdf - Rev. G 08/19 EN 2016 Micron Technology, Inc. All rights reserved. &. QV&/  ( ( ( 6SHHG*UDGH 0DUN 87 8OWUDKLJK $7 /< 1RQH &RPPHUFLDO 0DUN &DVH7 HPSHUDWXUH 3DFNDJH 0 0HJ[ 5HYLVLRQ &RQILJXUDWLRQ 07$ 5HYLVLRQ 6SHHG 3DFNDJH &RQILJXUDWLRQ

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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