MT41K128M16JT-125:K TR Micron

MT41K128M16JT-125:K TR electronic component of Micron
MT41K128M16JT-125:K TR Micron
MT41K128M16JT-125:K TR DRAM
MT41K128M16JT-125:K TR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MT41K128M16JT-125:K TR DRAM across the USA, India, Europe, Australia, and various other global locations. MT41K128M16JT-125:K TR DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

Part No. MT41K128M16JT-125:K TR
Manufacturer: Micron
Category: DRAM
Description: DRAM Chip DDR3L SDRAM 2Gbit 128Mx16 1.35V 96-Pin FBGA T/R
Datasheet: MT41K128M16JT-125:K TR Datasheet (PDF)
Price (USD)
1: USD 4.375 ea
Line Total: USD 4.38 
Availability : 20697
  
Ship by Wed. 22 Oct to Fri. 24 Oct
QtyUnit Price
1$ 4.375
10$ 3.498
25$ 3.454
50$ 3.256
100$ 3.201
250$ 3.124
500$ 3.014
1000$ 2.97
2000$ 2.849

Availability 211
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 62
Multiples : 1
QtyUnit Price
62$ 4.1964
67$ 3.9208
70$ 3.7219
100$ 3.367


Availability 20697
Ship by Wed. 22 Oct to Fri. 24 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 4.375
10$ 3.498
25$ 3.454
50$ 3.256
100$ 3.201
250$ 3.124
500$ 3.014
1000$ 2.97
2000$ 2.849


Availability 211
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 62
Multiples : 1
QtyUnit Price
62$ 4.1964
67$ 3.9208
70$ 3.7219
100$ 3.367

   
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MT41K128M16JT-125:K TR from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT41K128M16JT-125:K TR and other electronic components in the DRAM category and beyond.

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2Gb: x8, x16 Automotive DDR3L SDRAM Description 1.35V Automotive DDR3L SDRAM MT41K256M8 32 Meg x 8 x 8 banks MT41K128M16 16 Meg x 16 x 8 banks Output driver calibration Description 2 AEC-Q100 The 1.35V DDR3L SDRAM device is a low-voltage ver- PPAP submission sion of the 1.5V DDR3 SDRAM device. Refer to the 8D response time DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V compatible mode. Options Marking Configuration Features 256 Meg x 8 256M8 V = V = 1.35V (1.2831.45V) DD DDQ 128 Meg x 16 128M16 Backward-compatible to V = V = 1.5V 0.075V DD DDQ FBGA package (Pb-free) Differential bidirectional data strobe 78-ball FBGA (8mm x 10.5mm) DA 8n-bit prefetch architecture x8 Differential clock inputs (CK, CK#) 96-ball FBGA (8mm x 14mm) JT 8 internal banks x16 Nominal and dynamic on-die termination (ODT) Timing cycle time for data, strobe, and mask signals 1.07ns @ CL = 13 (DDR3-1866) -107 Programmable CAS (READ) latency (CL) 1.25ns @ CL = 11 (DDR3-1600) -125 Programmable posted CAS additive latency (AL) 1.5ns @ CL = 9 (DDR3-1333) -15E Programmable CAS (WRITE) latency (CWL) 1.875ns @ CL = 7 (DDR3-1066) -187E Fixed burst length (BL) of 8 and burst chop (BC) of 4 Product certification (via the mode register set [MRS]) Automotive A Selectable BC4 or BL8 on-the-fly (OTF) Operating temperature Self refresh mode Industrial (40C T +95C) IT C Refresh maximum interval time at T temperature C Automotive (40C T +105C) AT C range 3 Ultra-high (40C T +125C) UT C 64ms at 40C to +85C Revision :K 32ms at +85C to +105C 16ms at +105C to +115C 1. Not all options listed can be combined to Notes: 8ms at +115C to +125C define an offered product. Use the part cat- Self refresh temperature (SRT) alog search on Automatic self refresh (ASR) 2Gb: x8, x16 Automotive DDR3L SDRAM Description Table 1: Key Timing Parameters (Continued) t t t t Speed Grade Data Rate (MT/s) Target RCD- RP-CL RCD (ns) RP (ns) CL (ns) 1 -15E 1333 9-9-9 13.5 13.5 13.5 -187E 1066 7-7-7 13.1 13.1 13.1 Notes: 1. Backward compatible to 1066, CL = 7 (-187E). 2. Backward compatible to 1333, CL = 9 (-15E). 3. Backward compatible to 1600, CL = 11 (-125). Table 2: Addressing Parameter 256 Meg x 8 128 Meg x 16 Configuration 32 Meg x 8 x 8 banks 16 Meg x 16 x 8 banks Refresh count 8K 8K Row address 32K A[14:0] 16K A[13:0] Bank address 8 BA[2:0] 8 BA[2:0] Column address 1K A[9:0] 1K A[9:0] Figure 1: DDR3L Part Numbers ([DPSOH3DUW1XPEHU . 07.0'$$,7   ^ .  0HJ[ ,7 $XWRPRWLYH  EDOOPP[PP)%*$ EDOOPP[PP)%*$ -7 $XWRPRWLYH $  W &. QV&/  W  &. QV&/  W &. QV&/  W &. QV&/  1. Not all options listed can be combined to define an offered product. Use the part catalog search on Note:

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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