MT9KSF25672PZ-1G4K1 Micron

2GB, 4GB (x72, ECC, SR) 240-Pin DDR3L RDIMM Features 1.35V DDR3L SDRAM RDIMM MT9KSF25672PZ 2GB MT9KSF51272PZ 4GB Figure 1: 240-Pin RDIMM (MO-269 R/C A - Features PCB 0692) DDR3L functionality and operations supported as Module height: 30mm (1.18in) defined in the component data sheet 240-pin, registered dual in-line memory module (RDIMM) Fast data transfer rates: PC3-12800, or PC3-10600 2GB (256 Meg x 72), or 4GB (512 Meg x 72) V = 1.35V (1.2831.45V) DD Figure 2: 240-Pin RDIMM (MO-269 R/C A1 - V = 1.5V (1.4251.575V) DD PCB 1486) Backward compatible to V = 1.5V 0.075V DD Module height: 30mm (1.18in) V = 3.03.6V DDSPD Supports ECC error detection and correction Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals Single-rank 2 On-board I C temperature sensor with integrated Options Marking serial presence-detect (SPD) EEPROM Operating temperature Fixed burst chop (BC) of 4 and burst length (BL) of 8 Commercial (0C T +70C) None A via the mode register set (MRS) Package Selectable BC4 or BL8 on-the-fly (OTF) 240-pin DIMM (halogen-free) Z Gold edge contacts Frequency/CAS latency 1.25ns CL = 11 (DDR3-1600) -1G6 Halogen-free 1.5ns CL = 9 (DDR3-1333) -1G4 Fly-by topology Terminated control, command, and address bus Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 11 CL = 10 CL = 9 CL = 8 CL = 7 CL = 6 CL = 5 (ns) (ns) (ns) -1G6 PC3-12800 1600 1333 1333 1066 1066 800 667 13.125 13.125 48.125 -1G4 PC3-10600 1333 1333 1066 1066 800 667 13.125 13.125 49.125 -1G1 PC3-8500 1066 1066 800 667 13.125 13.125 50.625 -1G0 PC3-8500 1066 800 667 15 15 52.5 -80B PC3-6400 800 667 15 15 52.5 PDF: 09005aef83b2f73b Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 ksf9c256 512x72pz.pdf - Rev. I 7/15 EN 2009 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.2GB, 4GB (x72, ECC, SR) 240-Pin DDR3L RDIMM Features Table 2: Addressing Parameter 2GB 4GB Refresh count 8K 8K Row address 32K A 14:0 64K A 15:0 Device bank address 8 BA 2:0 8 BA 2:0 Device configuration 2Gb (256 Meg x 8) 4Gb (512 Meg x 8) Column address 1K A 9:0 1K A 9:0 Module rank address 1 S 0 1 S 0 Table 3: Part Numbers and Timing Parameters 2GB Modules 1 Base device: MT41K256M8, 2Gb 1.35V DDR3L SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT9KSF25672PZ-1G6 2GB 256 Meg x 72 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT9KSF25672PZ-1G4 2GB 256 Meg x 72 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 Table 4: Part Numbers and Timing Parameters 4GB Modules 1 Base device: MT41K512M8, 4Gb 1.35V DDR3L SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT9KSF51272PZ-1G6 4GB 512 Meg x 72 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT9KSF51272PZ-1G4 4GB 512 Meg x 72 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 Notes: 1. The data sheet for the base device can be found on Microns Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con- sult factory for current revision codes. Example: MT9KSF51272PZ-1G6P1. PDF: 09005aef83b2f73b Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 ksf9c256 512x72pz.pdf - Rev. I 7/15 EN 2009 Micron Technology, Inc. All rights reserved.