2GB (x64, SR) 260-Pin DDR4 SODIMM
Features
DDR4 SDRAM SODIMM
MTA4ATF25664HZ 2GB
Figure 1: 260-Pin SODIMM (MO-310 R/C C)
Features
Module Height: 30mm (1.181 in)
DDR4 functionality and operations supported as
defined in the component data sheet
260-pin, small-outline dual in-line memory module
(SODIMM)
Fast data transfer rates: PC4-2666, PC4-2400
2GB (256 Meg x 64)
V = 1.20V (NOM)
DD
V = 2.5V (NOM)
PP
V = 2.5V (NOM)
DDSPD
Nominal and dynamic on-die termination (ODT) for
Options Marking
data, strobe, and mask signals
Operating temperature
Low-power auto self refresh (LPASR)
Commercial (0C T 95C) None
OPER
Package
Data bus inversion (DBI) for data bus
260-pin DIMM (halogen-free) Z
On-die V generation and calibration
REFDQ
Frequency/CAS latency
Single-rank
0.75ns @ CL = 19 (DDR4-2666) -2G6
2
On-board I C serial presence-detect (SPD) EEPROM
0.83ns @ CL = 17 (DDR4-2400) -2G3
8 internal banks; 2 groups of 4 banks each
Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
Selectable BC4 or BL8 on-the-fly (OTF)
Gold edge contacts
Halogen-free
Fly-by topology
Terminated control command and address bus
Table 1: Key Timing Parameters
Data Rate (MT/s)
CL =
Industry 20,
t t t
Speed Nomen- CL = CL = CL = CL = CL = CL = CL = CL = CL = CL = RCD RP RC
Grade clature 19 18 17 16 15 14 13 12 11 10 CL = 9 (ns) (ns) (ns)
-2G6 PC4-2666 2666 2400 2400 2133 2133 1866 1866 1600 1600 1333 14.16 14.16 46.16
-2G4 PC4-2400 2400 2400 2400 2133 1866 1866 1600 1600 1333 1333 13.32 13.32 45.32
2133
-2G3 PC4-2400 2400 2400 2133 2133 1866 1866 1600 1600 1333 14.16 14.16 46.16
-2G1 PC4-2133 2133 2133 1866 1866 1600 1600 1333 1333 13.5 13.5 46.5
CCMTD-1725822587-3197 Micron Technology, Inc. reserves the right to change products or specifications without notice.
1
atf4c256x64hz.pdf Rev. H 4/18 EN 2013 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.2GB (x64, SR) 260-Pin DDR4 SODIMM
Features
Table 2: Addressing
Parameter 2GB
Row address 32K A[14:0]
Column address 1K A[9:0]
Device bank group address 2 BG0
Device bank address per group 4 BA[1:0]
Device configuration 4Gb (256 Meg x 16), 8 banks
Module rank address CS0_n
Table 3: Part Numbers and Timing Parameters 2GB Modules
1
Base device: MT40A256M16, 4Gb DDR4 SDRAM
Module Module Memory Clock/ Clock Cycles
2 t t
Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP)
MTA4ATF25664HZ-2G6__ 2GB 256 Meg x 64 21.3 GB/s 0.75ns/2666 MT/s 19-19-19
MTA4ATF25664HZ-2G3__ 2GB 256 Meg x 64 19.2 GB/s 0.83ns/2400 MT/s 17-17-17
Notes: 1. The data sheet for the base device can be found on micron.com.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions.
Consult factory for current revision codes. Example: MTA4ATF25664HZ-2G6B1.
CCMTD-1725822587-3197 Micron Technology, Inc. reserves the right to change products or specifications without notice.
2
atf4c256x64hz.pdf Rev. H 4/18 EN 2013 Micron Technology, Inc. All rights reserved.