NAND256W3A2BN6E Micron

NAND256W3A2BN6E electronic component of Micron
NAND256W3A2BN6E Micron
NAND256W3A2BN6E NAND Flash
NAND256W3A2BN6E  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NAND256W3A2BN6E NAND Flash across the USA, India, Europe, Australia, and various other global locations. NAND256W3A2BN6E NAND Flash are a product manufactured by Micron. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

Part No. NAND256W3A2BN6E
Manufacturer: Micron
Category: NAND Flash
Description: Flash Memory NAND 256 MEG
Datasheet: NAND256W3A2BN6E Datasheet (PDF)
Price (USD)
118: USD 2.9389 ea
Line Total: USD 346.79 
Availability : 0
  
QtyUnit Price
118$ 2.9389

Availability 0
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.1894


Availability 0
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 1
Multiples : 576
QtyUnit Price
1$ 35.2646


Availability 0
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 118
Multiples : 118
QtyUnit Price
118$ 2.9389

   
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We are delighted to provide the NAND256W3A2BN6E from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NAND256W3A2BN6E and other electronic components in the NAND Flash category and beyond.

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NAND128-A NAND256-A 128-Mbit or 256-Mbit, 528-byte/264-word page, 3 V, SLC NAND flash memories Features High density NAND flash memories Up to 256-Mbit memory array Up to 32-Mbit spare area Cost effective solutions for mass storage applications TSOP48 12 x 20mm NAND interface x8 or x16 bus width Multiplexed address/ data FBGA Pinout compatibility for all densities Supply voltage VFBGA55 8 x 10 x 1.05mm V = 2.7 to 3.6 V DD Page size x8 device: (512 + 16 spare) bytes x16 device: (256 + 8 spare) words Hardware data protection Block size Program/erase locked during power x8 device: (16 K + 512 spare) bytes transitions x16 device: (8 K + 256 spare) words Data integrity Page read/program 100,000 program/erase cycles Random access: 12 s (3V)/15 us (1.8V) 10 years data retention (max) RoHS compliance Sequential access: 50 ns (min) Lead-free components are compliant with Page program time: 200 s (typ) the RoHS directive Copy back program mode Development tools Fast page copy without external buffering Error correction code software and Fast block erase hardware models Block erase time: 2 ms (typical) Bad blocks management and wear leveling algorithms Status register File system OS native reference software Electronic signature Hardware simulation models Chip enable dont care Simple interface with microcontroller Security features OTP area Serial number (unique ID) October 2012 Rev. 17 1/60 www.numonyx.com 1Contents NAND128-A, NAND256-A Contents 1 Description 6 2 Memory array organization 14 2.1 Bad Blocks . 14 3 Signal descriptions 16 3.1 Inputs/outputs (I/O0-I/O7) 16 3.2 Inputs/outputs (I/O8-I/O15) . 16 3.3 Address Latch Enable (AL) . 16 3.4 Command Latch Enable (CL) . 16 3.5 Chip Enable (E) . 16 3.6 Read Enable (R) . 16 3.7 Write Enable (W) . 17 3.8 Write Protect (WP) 17 3.9 Ready/Busy (RB) 17 3.10 V supply voltage 17 DD 3.11 V ground . 17 SS 4 Bus operations 18 4.1 Command input 18 4.2 Address input . 18 4.3 Data input 18 4.4 Data output 19 4.5 Write protect . 19 4.6 Standby 19 5 Command set .21 6 Device operations .22 6.1 Pointer operations 22 6.2 Read memory array . 23 6.3 Page program . 26 2/60

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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