Product Information

NAND256W3A2BN6E

NAND256W3A2BN6E electronic component of Micron

Datasheet
Flash Memory NAND 256 MEG
Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

118: USD 3.0322 ea
Line Total: USD 357.8

0 - Global Stock
MOQ: 118  Multiples: 118
Pack Size: 118

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 3.2906

0 - WHS 2


Ships to you between Thu. 23 May to Wed. 29 May


Multiples : 576

0 - WHS 3


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 118
Multiples : 118
118 : USD 3.0322

Read More Specifications

     
Manufacturer
Product Category
Package / Case
Memory Size
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Flash Memory Type
Flash Memory Configuration
Memory Case Style
No. Of Pins
Access Time
Supply Voltage Min
Supply Voltage Max
Product Range
Rohs Phthalates Compliant
Msl
Svhc
Base Number
Block Size
Memory Type
Memory Voltage Vcc
Operating Temperature Range
Page Size
Read Cycle Time Trc
Supply Voltage Range
Termination Type
Voltage Vcc
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

More Products By Manufacturer "Micron"

Image Description
NAND512W3A2SZA6E electronic component of Micron NAND512W3A2SZA6E

SLC NAND Flash Parallel 3V/3.3V 512M-bit 64M x 8 12us 63-Pin VFBGA Tray
Stock : 0

NAND512W3A2SN6E electronic component of Micron NAND512W3A2SN6E

SLC NAND Flash Parallel 3V/3.3V 512M-bit 64M x 8 12us 48-Pin TSOP Tray
Stock : 0

NAND512R3A2SZA6E electronic component of Micron NAND512R3A2SZA6E

SLC NAND Flash Parallel 1.8V 512Mbit 64M x 8bit 15us 63-Pin VFBGA Tray
Stock : 0

NAND512W3A2SN6F electronic component of Micron NAND512W3A2SN6F

SLC NAND Flash Parallel 3V/3.3V 512M-bit 64M x 8 12us 48-Pin TSOP T/R
Stock : 0

NAND512W3A2SNXE electronic component of Micron NAND512W3A2SNXE

SLC NAND Flash Parallel 3V/3.3V 512M-bit 64M x 8 12us 48-Pin TSOP Tray
Stock : 0

NAND512W3A2SZA6F electronic component of Micron NAND512W3A2SZA6F

SLC NAND Flash Parallel 3V/3.3V 512M-bit 64M x 8 12us 63-Pin VFBGA T/R
Stock : 0

PC28F00AM29EWLA electronic component of Micron PC28F00AM29EWLA

PC28F00AM29EWLA
Stock : 0

PC28F00AP30BFA electronic component of Micron PC28F00AP30BFA

NOR Flash Parallel/Serial 1.8V 1G-bit 64M x 16 100ns 64-Pin BGA Tray
Stock : 0

PC28F00AM29EWHA electronic component of Micron PC28F00AM29EWHA

NOR Flash Parallel 3V/3.3V 1G-bit 128M x 8/64M x 16 100ns 64-Pin Fortified BGA Tray
Stock : 0

PC28F00AM29EWLE electronic component of Micron PC28F00AM29EWLE

NOR Flash Parallel 3V/3.3V 1Gbit 128M/64M x 8bit/16bit 100ns 64-Pin BGA Tray
Stock : 0

More Products By Category "NAND Flash"

Image Description
MT25QU01GBBB8E12-0SIT electronic component of Micron MT25QU01GBBB8E12-0SIT

NOR Flash SPI FLASH NOR SLC 256MX4 TBGA DDP
Stock : 1866

MT29F128G08AMCABH2-10Z:A electronic component of Micron MT29F128G08AMCABH2-10Z:A

SLC NAND Flash Parallel/Serial 3.3V 128G-bit 16G x 8 100-Pin TBGA
Stock : 0

MT29F16G16ADACAH4:C electronic component of Micron MT29F16G16ADACAH4:C

SLC NAND Flash Parallel 3.3V 16G-bit 1G x 16 63-Pin VFBGA
Stock : 0

MT29F1G01AAADDH4:D electronic component of Micron MT29F1G01AAADDH4:D

SLC NAND Flash Serial 3.3V 1G-bit 1G x 1 63-Pin VFBGA
Stock : 0

MT29F1G08ABADAH4:D electronic component of Micron MT29F1G08ABADAH4:D

NAND Flash SLC 1Gbit 8 63/120 VFBGA 1
Stock : 0

MT29F1G08ABAEAH4-AITX:E electronic component of Micron MT29F1G08ABAEAH4-AITX:E

NAND Flash SLC 1G 128MX8 FBGA
Stock : 0

MT29F1G08ABBDAHC:D electronic component of Micron MT29F1G08ABBDAHC:D

SLC NAND Flash Parallel 1.8V 1G-bit 128M x 8 63-Pin VFBGA Tray
Stock : 0

MT29F1G08ABBEAH4:E electronic component of Micron MT29F1G08ABBEAH4:E

SLC NAND Flash Parallel 1.8V 1Gbit 128M x 8bit 63-Pin VFBGA
Stock : 0

MT29F2G08ABAEAWP:E TR electronic component of Micron MT29F2G08ABAEAWP:E TR

SLC NAND Flash Parallel 3.3V 2G-bit 256M x 8 48-Pin TSOP-I T/R
Stock : 7563

MT29F2G08ABAEAWP-ITX:E electronic component of Micron MT29F2G08ABAEAWP-ITX:E

SLC NAND Flash Parallel 3.3V 2G-bit 256M x 8 48-Pin TSOP-I
Stock : 0

Additional Infomation About Product

NAND128-A NAND256-A 128-Mbit or 256-Mbit, 528-byte/264-word page, 3 V, SLC NAND flash memories Features High density NAND flash memories Up to 256-Mbit memory array Up to 32-Mbit spare area Cost effective solutions for mass storage applications TSOP48 12 x 20mm NAND interface x8 or x16 bus width Multiplexed address/ data FBGA Pinout compatibility for all densities Supply voltage VFBGA55 8 x 10 x 1.05mm V = 2.7 to 3.6 V DD Page size x8 device: (512 + 16 spare) bytes x16 device: (256 + 8 spare) words Hardware data protection Block size Program/erase locked during power x8 device: (16 K + 512 spare) bytes transitions x16 device: (8 K + 256 spare) words Data integrity Page read/program 100,000 program/erase cycles Random access: 12 s (3V)/15 us (1.8V) 10 years data retention (max) RoHS compliance Sequential access: 50 ns (min) Lead-free components are compliant with Page program time: 200 s (typ) the RoHS directive Copy back program mode Development tools Fast page copy without external buffering Error correction code software and Fast block erase hardware models Block erase time: 2 ms (typical) Bad blocks management and wear leveling algorithms Status register File system OS native reference software Electronic signature Hardware simulation models Chip enable dont care Simple interface with microcontroller Security features OTP area Serial number (unique ID) October 2012 Rev. 17 1/60 www.numonyx.com 1Contents NAND128-A, NAND256-A Contents 1 Description 6 2 Memory array organization 14 2.1 Bad Blocks . 14 3 Signal descriptions 16 3.1 Inputs/outputs (I/O0-I/O7) 16 3.2 Inputs/outputs (I/O8-I/O15) . 16 3.3 Address Latch Enable (AL) . 16 3.4 Command Latch Enable (CL) . 16 3.5 Chip Enable (E) . 16 3.6 Read Enable (R) . 16 3.7 Write Enable (W) . 17 3.8 Write Protect (WP) 17 3.9 Ready/Busy (RB) 17 3.10 V supply voltage 17 DD 3.11 V ground . 17 SS 4 Bus operations 18 4.1 Command input 18 4.2 Address input . 18 4.3 Data input 18 4.4 Data output 19 4.5 Write protect . 19 4.6 Standby 19 5 Command set .21 6 Device operations .22 6.1 Pointer operations 22 6.2 Read memory array . 23 6.3 Page program . 26 2/60

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

Micron may also be referenced as

EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

Looking for help? Visit our FAQ's Section to answer to all your questions

Resources

Company

Support

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
  +61 8 9358 9358 |   sales@x-on.com.au |   Chat
 
Policies | Terms and Conditions | Sitemap

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted