TAV1-541+ Mini-Circuits

TAV1-541+ electronic component of Mini-Circuits
TAV1-541+ Mini-Circuits
TAV1-541+ RF Amplifier
TAV1-541+  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of TAV1-541+ RF Amplifier across the USA, India, Europe, Australia, and various other global locations. TAV1-541+ RF Amplifier are a product manufactured by Mini-Circuits. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

Part No. TAV1-541+
Manufacturer: Mini-Circuits
Category: RF Amplifier
Description: RF Amplifier SMT Low Noise Amplifier 45 - 6000 MHz 50ohm
Datasheet: TAV1-541+ Datasheet (PDF)
Price (USD)
N/A


Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.5691
100$ 2.204
500$ 2.1699
1000$ 1.9995
N/A

   
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We are delighted to provide the TAV1-541+ from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TAV1-541+ and other electronic components in the RF Amplifier category and beyond.

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Ultra Low Noise, High Current E-PHEMT Transistor TAV1-541+ 50 0.045 to 6 GHz The Big Deal Low Noise Figure, 0.4 dB Gain, 24 dB typ. at 0.9 GHz High OIP3, +32 dBm CASE STYLE: TE2769 Product Overview TAV1-541+ is a low noise, high IP3 transistor device manufactured using E-PHEMPT* technology enabling it to work with a single positive supply voltage. It has outstanding Noise figure, particularly below 2.5 GHz, and when combining this noise figure with IP3 performance in a single device it makes it an ideal amplifier for multiple applications. Key Features Feature Advantages Use in multiple applications: Wideband, 0.045 to 6 GHz UHF, VHF, communication infrastructure High Gain, Low noise figure High Gain limits the effect of noise figure due to previous stages Small size, 1.18 x 1.42 x 0.85 mm, Small foot print saves space in dense layouts while providing low inductance, repeat- MCLP package able transitions, and excellent thermal contact to the PCB. * Enhancement mode Pseudomorphic High Electron Mobility Transistor. Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuits applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, Standard Terms) Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales minicircuits.com Page 1 of 5Ultra Low Noise, High Current E-PHEMT Transistor 0.045-6 GHz Product Features Low Noise Figure, 0.4 dB Gain, 24 dB typ. at 0.9 GHz High Output IP3, +32 dBm at 2 GHz, 60mA, 4V Output Power at 1dB compression, +21 dBm, 60mA, 4V Wide bandwidth External biasing and matching required TAV1-541+ CASE STYLE: TE2769 Typical Applications Cellular +RoHS Compliant ISM The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications GSM WCDMA WiMax WLAN UNII and HIPERLAN General Description TAV1-541+ is a low noise, high IP3 transistor device manufactured using E-PHEMPT* technology enabling it to work with a single positive supply voltage. It has outstanding Noise figure, particularly below 2.5 GHz, and when combining this noise figure with IP3 performance in a single device it makes it an ideal amplifier for multiple applications. simplified schematic and pin description TOP VIEW DRAIN GATE SOURCE Function Pad Number Description RF-IN 2 Gate used for RF input RF-OUT 4 Drain used for RF output GND 1,3 and Paddle Source terminal and Paddle, normally connected to ground. * Enhancement mode Pseudomorphic High Electron Mobility Transistor. Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuits applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, Standard Terms) Purchasers of this part are entitled REV. OR to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits website at www.minicircuits.com/MCLStore/terms.jsp ECO-001761 TAV1-541+ OM/CP/AM Mini-Circuits 200928 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales minicircuits.com Page 2 of 5

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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