Ultra Low Noise, Medium Current E-PHEMT Transistor TAV2-14LN+ 50 0.05 to 10 GHz The Big Deal Low Noise Figure, 0.6 dB typ. at 6 GHz, 2V 2mm x 2mm High Gain, 16.4 dB typ. at 6 GHz, 4V High OIP3, +30.9 dBm typ. at 6 GHz, 4V High P1dB, 18.8 dBm typ. at 6 GHz, 4V Product Overview Mini-Circuits TAV2-14LN+ is a MMIC E-PHEMT* transistor with an operating frequency range from 0.05 to 10 GHz. This model combines high gain with extremely low noise figure, resulting in lower overall system noise. Low NF and IP3 performance make it an ideal choice for sensitive receivers in communications sys- tems. Manufactured using highly repeatable E-PHEMT technology, the unit comes housed in a tiny 2x2mm MCLP package. This model requires external biasing and matching. Key Features Feature Advantages Wideband, 0.05 to 10 GHz A single device covers many wireless communications bands including cellular, ISM, Usable to 12 GHz GSM, WCDMA, WiMax, WLAN, 5G and more. The TAV2-14LN+ matches industry leading IP3 performance relative to device size High IP3 vs. DC power consumption and power consumption. Enhanced linearity over a broad frequency range makes the +30.9 dBm at 6 GHz, 4V device ideal for use in: +33.2 dBm at 12 GHz, 4V Driver amplifiers for complex waveform up converter paths Drivers in linearized transmit systems Combines high gain (16.4 dB) with very The unique combination of high gain and low Noise Figure results in lower overall low Noise Figure (0.7 dB) system noise. Tiny footprint saves space in dense layouts while providing low inductance, repeatable 2 x 2mm 6-lead MCLP package transitions, and excellent thermal contact to the PCB. * Enhancement mode Pseudomorphic High Electron Mobility Transistor. Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuits applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, Standard Terms) Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales minicircuits.com Page 1 of 5Ultra Low Noise, Medium Current E-PHEMT Transistor TAV2-14LN+ 50 0.05 to 10 GHz Product Features Low Noise Figure, 0.6 dB typ. at 6 GHz, 2V, Gain, 16.4 dB typ. at 6 GHz, 4V High Output IP3, +30.9 dBm at 6 GHz, 4V Output Power at 1dB comp., +18.8 dBm at 6 GHz, 4V Generic photo used for illustration purposes only External biasing and matching required Usable to 12 GHz CASE STYLE: MC1630-1 +RoHS Compliant Typical Applications The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications 5G Cellular ISM GSM WCDMA WiMax WLAN UNII and HIPERLAN General Description Mini-Circuits TAV2-14LN+ is a MMIC E-PHEMT* transistor with an operating frequency range from 0.05 to 10 GHz. This model combines high gain with extremely low noise figure, resulting in lower overall system noise. Low NF and IP3 performance make it an ideal choice for sensitive receivers in communications sys- tems. Manufactured using highly repeatable E-PHEMT technology, the unit comes housed in a tiny 2x2mm MCLP package. This model requires external biasing and matching. simplified schematic and pin description DRAIN GATE SOURCE Function Pin Number Description RF-IN 2 Gate used for RF input RF-OUT 5 Drain used for RF output GND 1,3,4,6 & Paddle Source terminal, normally connected to ground. Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuits applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, Standard Terms) Purchasers of this part are entitled REV. OR to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits website at www.minicircuits.com/MCLStore/terms.jsp ECO-001966 TAV2-14LN+ GY/RS/CP Mini-Circuits 200227 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales minicircuits.com Page 2 of 5