X-On Electronics has gained recognition as a prominent supplier of FDV303N MOSFET across the USA, India, Europe, Australia, and various other global locations. FDV303N MOSFET are a product manufactured by MSKSEMI. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

FDV303N MSKSEMI

FDV303N electronic component of MSKSEMI
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See Product Specifications
Part No.FDV303N
Manufacturer: MSKSEMI
Category: MOSFET
Description: SOT-23 MOSFETs ROHS
Datasheet: FDV303N Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.0472 ea
Line Total: USD 0.94

Availability - 9040
Ships to you between
Fri. 28 Jun to Wed. 03 Jul
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
0 - WHS 1


Ships to you between
Fri. 28 Jun to Wed. 03 Jul

MOQ : 10
Multiples : 10
10 : USD 0.0448
100 : USD 0.0365
300 : USD 0.0322
3000 : USD 0.0278
6000 : USD 0.0252
9000 : USD 0.0239

   
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We are delighted to provide the FDV303N from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDV303N and other electronic components in the MOSFET category and beyond.

The FDV303N with SOT-23 MOSFETs ROHS manufactured by MSKSEMI is an integrated N-channel enhancement type MOSFET designed for general purpose switching and low-power applications. It operates over a wide temperature range from –40°C to +85°C and has a low on-resistance of 3.5 Ohms. It is equipped with an integrated, integrated N-channel gate protection diode which helps to protect the MOSFET from transient overvoltage spikes. The MOSFET also has an RoHS Compliant lead-free finish. This MOSFET offers very low RDS (on) and is available in SOT-23 (3 leads) packages. It is ideal for applications like load switching, voltage clamping, and IRF applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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