FDV303N MSKSEMI

FDV303N electronic component of MSKSEMI
FDV303N MSKSEMI
FDV303N MOSFETs
FDV303N  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FDV303N MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDV303N MOSFETs are a product manufactured by MSKSEMI. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. FDV303N
Manufacturer: MSKSEMI
Category: MOSFETs
Description: SOT-23 MOSFETs ROHS
Datasheet: FDV303N Datasheet (PDF)
Price (USD)
20: USD 0.0646 ea
Line Total: USD 1.29 
Availability : 9816
  
Ship by Mon. 11 Aug to Thu. 14 Aug
QtyUnit Price
20$ 0.0646
200$ 0.0528
600$ 0.0345
3000$ 0.0283
21000$ 0.0248
39000$ 0.0244

Availability 9816
Ship by Mon. 11 Aug to Thu. 14 Aug
MOQ : 20
Multiples : 20
QtyUnit Price
20$ 0.0646
200$ 0.0528
600$ 0.0345
3000$ 0.0283
21000$ 0.0248
39000$ 0.0244

   
Manufacturer
Product Category
Package
Rohs
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We are delighted to provide the FDV303N from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDV303N and other electronic components in the MOSFETs category and beyond.

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The FDV303N with SOT-23 MOSFETs ROHS manufactured by MSKSEMI is an integrated N-channel enhancement type MOSFET designed for general purpose switching and low-power applications. It operates over a wide temperature range from –40°C to +85°C and has a low on-resistance of 3.5 Ohms. It is equipped with an integrated, integrated N-channel gate protection diode which helps to protect the MOSFET from transient overvoltage spikes. The MOSFET also has an RoHS Compliant lead-free finish. This MOSFET offers very low RDS (on) and is available in SOT-23 (3 leads) packages. It is ideal for applications like load switching, voltage clamping, and IRF applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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