X-On Electronics has gained recognition as a prominent supplier of FDV303N MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDV303N MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDV303N ON Semiconductor

FDV303N electronic component of ON Semiconductor
FDV303N ON Semiconductor
FDV303N MOSFETs
FDV303N  Semiconductors

Images are for reference only
See Product Specifications
Part No. FDV303N
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: 25V 680mA 450mO@4.5V,500mA 350mW N Channel SOT-23 MOSFETs ROHS
A 12-Bit, 3V, 500ksps, Low-Power, (SPI and UART) Sampling ADC.
Datasheet: FDV303N Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.0954 ea
Line Total: USD 0.95 
Availability - 80228
Ship by Mon. 07 Jul to Thu. 10 Jul
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
165870
Ship by Mon. 30 Jun to Fri. 04 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.0634
6000 : USD 0.0624
9000 : USD 0.0615
12000 : USD 0.0605
27000 : USD 0.0592
51000 : USD 0.0584
102000 : USD 0.0571
150000 : USD 0.0563

3515280
Ship by Mon. 30 Jun to Fri. 04 Jul
MOQ : 6000
Multiples : 3000
6000 : USD 0.0477
9000 : USD 0.0466
12000 : USD 0.0462
30000 : USD 0.0435
45000 : USD 0.0425

80228
Ship by Mon. 07 Jul to Thu. 10 Jul
MOQ : 10
Multiples : 10
10 : USD 0.0954
100 : USD 0.0746
300 : USD 0.0644
3000 : USD 0.0382
6000 : USD 0.034
9000 : USD 0.0319

7976
Ship by Thu. 26 Jun to Mon. 30 Jun
MOQ : 1
Multiples : 1
1 : USD 0.266
10 : USD 0.161
50 : USD 0.1117
100 : USD 0.0965
364 : USD 0.0519
1000 : USD 0.049

165870
Ship by Mon. 30 Jun to Fri. 04 Jul
MOQ : 6000
Multiples : 3000
6000 : USD 0.0789
6000 : USD 0.0762
9000 : USD 0.0751
12000 : USD 0.0728
27000 : USD 0.0713

646020
Ship by Mon. 30 Jun to Fri. 04 Jul
MOQ : 6000
Multiples : 3000
6000 : USD 0.059

5023
Ship by Mon. 30 Jun to Fri. 04 Jul
MOQ : 2707
Multiples : 1
2707 : USD 0.0961

12751
Ship by Mon. 30 Jun to Fri. 04 Jul
MOQ : 5770
Multiples : 1
5770 : USD 0.0813
10000 : USD 0.0725
100000 : USD 0.0607

14550

Ships to you between
Wed. 02 Jul to Mon. 07 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.04
6000 : USD 0.0387
9000 : USD 0.038
12000 : USD 0.0375

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Height
Length
Product
Series
Transistor Type
Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
LoadingGif
 
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We are delighted to provide the FDV303N from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDV303N and other electronic components in the MOSFETs category and beyond.

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The FDV303N is a surface-mount N-Channel MOSFET produced by ON Semiconductor. It is designed to be used as a low-side switch in various electronic circuits. It features a maximum drain current of 30A, a maximum drain-source voltage of 30V, and an on-resistance of 1.1O. The device also features an internal ESD protection circuitry and significantly low gate charge.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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