Product Information

NCE30TD60B

NCE30TD60B electronic component of NCE Power

Datasheet
TO-220 IGBTs ROHS
Manufacturer: NCE Power
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.6425 ea
Line Total: USD 1.64

874 - Global Stock
Ships to you between
Thu. 23 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
37 - WHS 1


Ships to you between
Thu. 23 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

NCE30TD60B
NCE Power

1 : USD 1.5894
10 : USD 1.3536
50 : USD 1.2227
100 : USD 1.0777
500 : USD 1.0133
1000 : USD 0.9831

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
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Additional Infomation About Product

The NCE30TD60B with TO-220 IGBTs ROHS manufactured by NCE Power is an insulated gate bipolar transistor designed for use in high frequency, high power applications. This device features a high power dissipation capability of over 30A, a low forward voltage drop of 1.2V for 30A, and a maximum collector-emitter voltage of 600V. It is RoHS compliant and features an improved Igbt-type structure with built-in temperature sensing and high efficiency. Additionally, it has improved EMI performance and switching characteristics, allowing for easier drive and control.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NCE Power may also be referenced as

Wuxi NCE Power Semiconductor

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