NCE30TD60B NCE Power

NCE30TD60B electronic component of NCE Power
NCE30TD60B NCE Power
NCE30TD60B IGBT Transistors
NCE30TD60B  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NCE30TD60B IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. NCE30TD60B IGBT Transistors are a product manufactured by NCE Power. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. NCE30TD60B
Manufacturer: NCE Power
Category: IGBT Transistors
Description: TO-220 IGBTs ROHS
Datasheet: NCE30TD60B Datasheet (PDF)
Price (USD)
1: USD 2.116 ea
Line Total: USD 2.12 
Availability : 0
  
QtyUnit Price
1$ 2.116
10$ 1.8022
50$ 1.0988
100$ 0.9685
500$ 0.9105
1000$ 0.8833

Availability 0
Ship by Mon. 13 Oct to Fri. 17 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.116
10$ 1.8022
50$ 1.0988
100$ 0.9685
500$ 0.9105
1000$ 0.8833

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NCE30TD60B from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NCE30TD60B and other electronic components in the IGBT Transistors category and beyond.

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The NCE30TD60B with TO-220 IGBTs ROHS manufactured by NCE Power is an insulated gate bipolar transistor designed for use in high frequency, high power applications. This device features a high power dissipation capability of over 30A, a low forward voltage drop of 1.2V for 30A, and a maximum collector-emitter voltage of 600V. It is RoHS compliant and features an improved Igbt-type structure with built-in temperature sensing and high efficiency. Additionally, it has improved EMI performance and switching characteristics, allowing for easier drive and control.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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