IKB20N60TATMA1 Infineon

IKB20N60TATMA1 electronic component of Infineon
IKB20N60TATMA1 Infineon
IKB20N60TATMA1 IGBT Transistors
IKB20N60TATMA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IKB20N60TATMA1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IKB20N60TATMA1 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. IKB20N60TATMA1
Manufacturer: Infineon
Category: IGBT Transistors
Description: IGBT Transistors INDUSTRY 14
Datasheet: IKB20N60TATMA1 Datasheet (PDF)
Price (USD)
1: USD 3.6742 ea
Line Total: USD 3.67 
Availability : 0
  
QtyUnit Price
1$ 3.6742
10$ 2.629
100$ 1.9083
500$ 1.7167
1000$ 1.5907

Availability 0
Ship by Thu. 07 Aug to Wed. 13 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.6742
10$ 2.629
100$ 1.9083
500$ 1.7167
1000$ 1.5907


Availability 0
Ship by Tue. 05 Aug to Thu. 07 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.3923
5$ 3.0531
8$ 2.2253
20$ 2.1033

   
Manufacturer
Product Category
Power Dissipation
Technology
Technology
Category
Mounting
Kind Of Package
Collector-Emitter Voltage
Case
Type Of Transistor
Collector Current
Gate Charge
Semiconductor Structure
Gate-Emitter Voltage
Pulsed Collector Current
Turn-Off Time
Turn-On Time
Features Of Semiconductor Devices
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IKB20N60TATMA1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IKB20N60TATMA1 and other electronic components in the IGBT Transistors category and beyond.

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IKB20N60T TRENCHSTOP Series p Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: C Very low V 1.5V (typ.) CE(sat) Maximum Junction Temperature 175C Short circuit withstand time 5s Designed for frequency inverters for washing machines, fans, pumps and vacuum G cleaners E TRENCHSTOP and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in V CE(sat) Low EMI Low Gate Charge 1 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : IKB20N60T TRENCHSTOP Series p Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 0.9 K/W thJC junction case Diode thermal resistance, R 1.5 t h J C D junction case Thermal resistance, R 6cm Cu 40 t h J A junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. Typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, I =0.2mA 600 - - V ( B R ) C E S GE C Collector-emitter saturation voltage V V = 15V, I =20A C E ( s a t ) GE C - 1.5 2.05 T =25 C j - 1.9 - T =175 C j Diode forward voltage V V =0V, I =20A F GE F T =25 C - 1.65 2.05 j - 1.6 - T =175 C j Gate-emitter threshold voltage V I =290A,V =V 4.1 4.9 5.7 G E ( t h) C CE GE Zero gate voltage collector current I V =600V, A C E S CE V =0V GE T =25 C j - - 40 T =175 C j - - 1500 Gate-emitter leakage current I V =0V,V =20V - - 100 nA G E S CE GE Transconductance g V =20V, I =20A - 11 - S fs CE C Integrated gate resistor R - G i n t Dynamic Characteristic Input capacitance C V =25V, - - pF i s s CE 1100 V =0V, Output capacitance C - - o s s GE 71 f=1MHz Reverse transfer capacitance C - - r s s 32 Gate charge Q V =480V, I =20A - 120 - nC G a t e CC C V =15V GE Internal emitter inductance L - 7 - nH E measured 5mm (0.197 in.) from case 1) Short circuit collector current I V =15V,t 5 s - 183.3 - A C ( S C ) GE SC V = 400V, C C T 150 C j 1) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.7 18.05.2015 IFAG IPC TD VLS

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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