Product Information

NCE82H110D

NCE82H110D electronic component of NCE Power

Datasheet
TO-263 MOSFETs ROHS
Manufacturer: NCE Power
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.4177 ea
Line Total: USD 1.42

44 - Global Stock
Ships to you between
Fri. 17 May to Wed. 22 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
44 - WHS 1


Ships to you between
Fri. 17 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

NCE82H110D
NCE Power

1 : USD 1.3718
10 : USD 1.1764
30 : USD 1.0696
100 : USD 0.9468
500 : USD 0.8923
800 : USD 0.8682

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
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Additional Infomation About Product

The NCE82H110D with TO-263 MOSFETs ROHS is a high-power semiconductor device manufactured by NCE Power. It is designed to provide a high level of power switching and optimization in electronic circuits. The device features an operating power range of 60 V and a rated power of 1.2 A. It also boasts enhanced thermal dissipation in order to minimize thermal resistance. The TO-263 package integrates a high-speed MOSFET with low on-resistance, making it ideal for high switching frequency applications. Additionally, the device meets RoHS requirements to meet and exceed safety standards.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NCE Power may also be referenced as

Wuxi NCE Power Semiconductor

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