Product Information

BSH205

BSH205 electronic component of Nexperia

Datasheet
MOSFET, P, -12V, -0.75A, SOT-23
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.5483 ea
Line Total: USD 2.74

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 5
Multiples : 1

Stock Image

BSH205
Nexperia

5 : USD 0.4144
10 : USD 0.2872
100 : USD 0.1892
500 : USD 0.1411
1000 : USD 0.1213
5000 : USD 0.1009

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Current Temperature
External Depth
External Length / Height
External Width
Full Power Rating Temperature
No. Of Transistors
On State Resistance Max
Operating Temperature Min
Operating Temperature Range
Pulse Current Idm
Tape Width
Termination Type
Voltage Vgs Max
Voltage Vgs Rds On Measurement
Voltage Vgs Th P Channel Min
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Additional Infomation About Product

Philips Semiconductors Product specification P-channel enhancement mode BSH205 MOS transistor FEATURES SYMBOL QUICK REFERENCE DATA s Very low threshold voltage V = -12 V DS Fast switching Logic level compatible I = -0.75 A D g Subminiature surface mount package R 0.5 (V = -2.5 V) DS(ON) GS V 0.4 V GS(TO) d GENERAL DESCRIPTION PINNING SOT23 P-channel, enhancement mode, PIN DESCRIPTION logic level, field-effect power 3 transistor. This device has low 1 gate Top view threshold voltage and extremely fast switching making it ideal for 2 source battery powered applications and high speed digital interfacing. 3 drain 1 2 The BSH205 is supplied in the SOT23 subminiature surface mounting package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V Drain-source voltage - -12 V DS V Drain-gate voltage R = 20 k - -12 V DGR GS V Gate-source voltage - 8V GS I Drain current (DC) T = 25 C - -0.75 A D a T = 100 C - -0.47 A a I Drain current (pulse peak value) T = 25 C - -3 A DM a P Total power dissipation T = 25 C - 0.417 W tot a T = 100 C - 0.17 W a T , T Storage & operating temperature - 55 150 C stg j THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R Thermal resistance junction to FR4 board, minimum 300 - K/W th j-a ambient footprint August 1998 1 Rev 1.000Philips Semiconductors Product specification P-channel enhancement mode BSH205 MOS transistor ELECTRICAL CHARACTERISTICS T= 25C unless otherwise specified j SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V Drain-source breakdown V = 0 V I = -10 A -12 - - V (BR)DSS GS D voltage V Gate threshold voltage V = V I = -1 mA -0.4 -0.68 - V GS(TO) DS GS D T = 150C -0.1 - - V j R Drain-source on-state V = -4.5 V I = -430 mA - 0.18 0.4 DS(ON) GS D resistance V = -2.5 V I = -430 mA - 0.32 0.5 GS D V = -1.8 V I = -210 mA - 0.42 0.6 GS D V = -2.5 V I = -430 mA T = 150C - 0.48 0.75 GS D j g Forward transconductance V = -9.6 V I = -430 mA 0.5 1.6 - S fs DS D I Gate source leakage current V = 8 V V = 0 V - 10 100 nA GSS GS DS I Zero gate voltage drain V = -9.6 V V = 0 V - -50 -100 nA DSS DS GS current T = 150C - -11 -100 A j Q Total gate charge I = -0.5 A V = -10 V V = -4.5 V - 3.8 - nC g(tot) D DD GS Q Gate-source charge - 0.4 - nC gs Q Gate-drain (Miller) charge - 1.0 - nC gd t Turn-on delay time V = -10 V I = -0.5 A - 2 - ns d on DD D t Turn-on rise time V = -8 V R = 6 - 4.5 - ns r GS G t Turn-off delay time Resistive load - 45 - ns d off t Turn-off fall time - 20 - ns f C Input capacitance V = 0 V V = -9.6 V f = 1 MHz - 200 - pF iss GS DS C Output capacitance - 95 - pF oss C Feedback capacitance - 41 - pF rss REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T = 25C unless otherwise specified j SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I Continuous reverse drain T = 25 C - - -0.75 A DR a current I Pulsed reverse drain current - - -3 A DRM V Diode forward voltage I = -0.38 A V = 0 V - -0.72 -1.3 V SD F GS t Reverse recovery time I = -0.5 A -dI /dt = 100 A/s - 75 - ns rr F F Q Reverse recovery charge V = 0 V V = -9.6 V - 69 - nC rr GS R August 1998 2 Rev 1.000

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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