X-On Electronics has gained recognition as a prominent supplier of BUK6610-75C,118 mosfet across the USA, India, Europe, Australia, and various other global locations. BUK6610-75C,118 mosfet are a product manufactured by Nexperia. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

BUK6610-75C,118 Nexperia

BUK6610-75C,118 electronic component of Nexperia
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See Product Specifications
Part No.BUK6610-75C,118
Manufacturer: Nexperia
Category:MOSFET
Description: MOSFET N-CHAN 75V 78A
Datasheet: BUK6610-75C,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.6167 ea
Line Total: USD 1.62

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 800
Multiples : 800
800 : USD 0.7871

0 - WHS 2


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 1.7044
10 : USD 1.5142
100 : USD 1.1966

0 - WHS 3


Ships to you between Tue. 11 Jun to Thu. 13 Jun

MOQ : 1
Multiples : 1
1 : USD 1.6167
10 : USD 1.1394
100 : USD 0.8488
500 : USD 0.8009
800 : USD 0.5809
2400 : USD 0.5602
9600 : USD 0.553
24800 : USD 0.5348

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Transistor Type
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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BUK6610-75C N-channel TrenchMOS FET Rev. 02 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for thermally demanding environments due to 175 C rating Suitable for intermediate level gate drive sources 1.3 Applications 12 V Automotive systems Start-Stop micro-hybrid applications Electric and electro-hydraulic power Transmission control steering Ultra high performance power EngineMotors, lamps and solenoid switching control management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --75 V DS j j I drain current V =10V T =25C --78 A D GS mb see Figure 1 P total power dissipation T = 25 C see Figure 2 --158W tot mb Static characteristics R drain-source on-state V =10V I =25A -8.6 10 m DSon GS D resistance T =25C see Figure 11 jBUK6610-75C Nexperia N-channel TrenchMOS FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =78A V 75 V --121mJ DS(AL)S D sup drain-source avalanche R =50 V =10V GS GS energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge I =25A V =60V -30 -nC GD D DS V = 10 V see Figure 13 GS see Figure 14 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK6610-75C D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) BUK6610-75C All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 14 October 2010 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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