X-On Electronics has gained recognition as a prominent supplier of BUK72150-55A,118 MOSFET across the USA, India, Europe, Australia, and various other global locations. BUK72150-55A,118 MOSFET are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

BUK72150-55A,118 Nexperia

BUK72150-55A,118 electronic component of Nexperia
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Part No.BUK72150-55A,118
Manufacturer: Nexperia
Category: MOSFET
Description: N-Channel 55 V 11A (Tc) 36W (Tc) Surface Mount DPAK
Datasheet: BUK72150-55A,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.4452 ea
Line Total: USD 1113

Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 1
Multiples : 1
1 : USD 1.1625
10 : USD 0.972
100 : USD 0.7457
500 : USD 0.5895
1000 : USD 0.4716

0 - WHS 2


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 1
Multiples : 1
1 : USD 1.1625
10 : USD 0.972
100 : USD 0.7457
500 : USD 0.5895
1000 : USD 0.4716

0 - WHS 3


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 2500
Multiples : 2500
2500 : USD 0.4452
5000 : USD 0.3979
12500 : USD 0.3832
25000 : USD 0.3698

0 - WHS 4


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 10000
Multiples : 10000
10000 : USD 0.3867

0 - WHS 5


Ships to you between Thu. 27 Jun to Mon. 01 Jul

MOQ : 1
Multiples : 1
1 : USD 2.3239
10 : USD 0.8459
100 : USD 0.623
500 : USD 0.4829
1000 : USD 0.3868
2500 : USD 0.3654

0 - WHS 6


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 1
Multiples : 1
1 : USD 1.1074
5 : USD 0.8036
25 : USD 0.721
30 : USD 0.5418
82 : USD 0.5124

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the BUK72150-55A,118 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK72150-55A,118 and other electronic components in the MOSFET category and beyond.

BUK72150-55A N-channel TrenchMOS standard level FET Rev. 03 26 January 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for standard level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V and 24 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit drain-source T 25 C T 175C --55 V V DS j j voltage I drain current V =10V T =25C --11 A D GS mb see Figure 3 see Figure 1 P total power T = 25 C see Figure 2 --36 W tot mb dissipation Static characteristics drain-source V =10V I =5A -127150m R DSon GS D on-state T =25C see Figure 10 j resistance see Figure 11BUK72150-55A Nexperia N-channel TrenchMOS standard level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =11A V 55 V --16 mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =10V I =3A -2.7 -nC GD GS D V =44 V T =25C DS j see Figure 12 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 1 3 SOT428 (DPAK) 1 It is not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK72150-55A DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) BUK72150-55A All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 03 26 January 2011 2 of 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.

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