BUK72150-55A,118 Nexperia

BUK72150-55A,118 electronic component of Nexperia
BUK72150-55A,118 Nexperia
BUK72150-55A,118 MOSFETs
BUK72150-55A,118  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BUK72150-55A,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK72150-55A,118 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BUK72150-55A,118
Manufacturer: Nexperia
Category: MOSFETs
Description: N-Channel 55 V 11A (Tc) 36W (Tc) Surface Mount DPAK
Datasheet: BUK72150-55A,118 Datasheet (PDF)
Price (USD)
1: USD 1.375 ea
Line Total: USD 1.38 
Availability : 0
  
QtyUnit Price
1$ 1.375
10$ 0.8208
100$ 0.5082
500$ 0.4147
1000$ 0.3861
2500$ 0.3366
5000$ 0.319
10000$ 0.3179

Availability 0
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.1268
10$ 0.9421
100$ 0.7227
500$ 0.5713
1000$ 0.4571


Availability 0
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.1268
10$ 0.9421
100$ 0.7227
500$ 0.5713
1000$ 0.4571


Availability 0
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.4315
5000$ 0.3856
12500$ 0.3714
25000$ 0.3584


Availability 0
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 10000
Multiples : 10000
QtyUnit Price
10000$ 0.3748


Availability 0
Ship by Tue. 18 Nov to Thu. 20 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.375
10$ 0.8208
100$ 0.5082
500$ 0.4147
1000$ 0.3861
2500$ 0.3366
5000$ 0.319
10000$ 0.3179


Availability 0
Ship by Tue. 18 Nov to Thu. 20 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0733
5$ 0.7789
25$ 0.6988
30$ 0.5251
82$ 0.4966

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUK72150-55A,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK72150-55A,118 and other electronic components in the MOSFETs category and beyond.

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BUK72150-55A N-channel TrenchMOS standard level FET Rev. 03 26 January 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for standard level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V and 24 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit drain-source T 25 C T 175C --55 V V DS j j voltage I drain current V =10V T =25C --11 A D GS mb see Figure 3 see Figure 1 P total power T = 25 C see Figure 2 --36 W tot mb dissipation Static characteristics drain-source V =10V I =5A -127150m R DSon GS D on-state T =25C see Figure 10 j resistance see Figure 11BUK72150-55A Nexperia N-channel TrenchMOS standard level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =11A V 55 V --16 mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =10V I =3A -2.7 -nC GD GS D V =44 V T =25C DS j see Figure 12 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 1 3 SOT428 (DPAK) 1 It is not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK72150-55A DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) BUK72150-55A All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 03 26 January 2011 2 of 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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