X-On Electronics has gained recognition as a prominent supplier of BUK7107-55ATE,118 mosfet across the USA, India, Europe, Australia, and various other global locations. BUK7107-55ATE,118 mosfet are a product manufactured by NXP. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

BUK7107-55ATE,118 NXP

BUK7107-55ATE,118 electronic component of NXP
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Part No.BUK7107-55ATE,118
Manufacturer: NXP
Category:MOSFET
Description: MOSFET TRENCHPLUS MOSFET
Datasheet: BUK7107-55ATE,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

800: USD 1.9387 ea
Line Total: USD 1550.96

Availability - 0
MOQ: 800  Multiples: 800
Pack Size: 800
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 04 Jun to Mon. 10 Jun

MOQ : 800
Multiples : 800
800 : USD 1.9387

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Brand
Fall Time
Rise Time
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Typical Turn-Off Delay Time
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BUK7107-55ATE N-channel TrenchPLUS standard level FET Rev. 02 19 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Allows responsive temperature Low conduction losses due to low monitoring due to integrated on-state resistance temperature sensor Q101 compliant Electrostatically robust due to Suitable for standard level gate drive integrated protection diodes sources 1.3 Applications Automotive and general purpose Fan control power switching Variable Valve Timing for engines Electrical Power Assisted Steering (EPAS) 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 55 V DS j j I drain current V =10V T =25C 1 - - 140 A D GS mb see Figure 2 see Figure 3 P total power T = 25 C see Figure 1 - - 272 W tot mb dissipation Static characteristics R drain-source V =10V I =50A -5.8 7 m DSon GS D on-state resistance T =25C j Avalanche ruggedness E non-repetitive I =68 A V 55 V - - 460 mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) 1 Current is limited by power dissipation chip ratingNXP Semiconductors BUK7107-55ATE N-channel TrenchPLUS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D A 2 A anode 3D drain G 4 K cathode 5S source 3 mb D mounting base connected to S K 1245 mbl317 drain SOT426 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7107-55ATE D2PAK plastic single-ended surface-mounted package (D2PAK) 5 leads (one SOT426 lead cropped) BUK7107-55ATE 2 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 19 February 2009 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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