BUK7610-100B,118 Nexperia

BUK7610-100B,118 electronic component of Nexperia
BUK7610-100B,118 Nexperia
BUK7610-100B,118 MOSFETs
BUK7610-100B,118  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BUK7610-100B,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK7610-100B,118 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BUK7610-100B,118
Manufacturer: Nexperia
Category: MOSFETs
Description: N-Channel 100 V 75A (Tc) 300W (Tc) Surface Mount D2PAK
Datasheet: BUK7610-100B,118 Datasheet (PDF)
Price (USD)
1: USD 4.525 ea
Line Total: USD 4.53 
Availability : 0
  
QtyUnit Price
1$ 4.525
10$ 2.8405
100$ 2.156
500$ 1.969
800$ 1.738
2400$ 1.727

Availability 0
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 7.4175
10$ 6.4206
100$ 5.2606


Availability 0
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 7.4175
10$ 6.4206
100$ 5.2606


Availability 0
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.037
10$ 2.9673
30$ 2.9226
100$ 2.8762


Availability 0
Ship by Tue. 18 Nov to Thu. 20 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 4.525
10$ 2.8405
100$ 2.156
500$ 1.969
800$ 1.738
2400$ 1.727


Availability 0
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 4
Multiples : 1
QtyUnit Price
4$ 3.1532
10$ 2.8214
25$ 2.6062
100$ 2.3926
250$ 2.0938
500$ 2.052

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
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Pd - Power Dissipation
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Technology
Number of Channels
Vgs - Gate-Source Voltage
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Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
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Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUK7610-100B,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK7610-100B,118 and other electronic components in the MOSFETs category and beyond.

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BUK7610-100B N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low on-state resistance Q101 compliant Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V, 24 V and 42 V loads Automotive systems General purpose power switching Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current V = 10 V T = 25 C Fig. 1 Fig. 3 1 - - 75 A D GS mb P total power dissipation T = 25 C Fig. 2 - - 300 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 8.6 10 m DSon GS D j resistance Fig. 11 Fig. 12 Dynamic characteristics Q gate-drain charge V = 10 V I = 25 A V = 80 V - 22 - nC GD GS D DS T = 25 C Fig. 13 j Avalanche ruggedness E non-repetitive drain- I = 75 A V 100 V R = 50 - - 629 mJ DS(AL)S D sup GS source avalanche V = 10 V T = 25 C unclamped GS j(init) energyNexperia BUK7610-100B N-channel TrenchMOS standard level FET 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb D 1 G gate 2 D drain 1 G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 D2PAK (SOT404) 1 It is not possible to make connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7610-100B D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Marking Table 4. Marking codes Type number Marking code BUK7610-100B BUK7610-100B 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage R = 20 k - 100 V DGR GS V gate-source voltage -20 20 V GS I drain current T = 25 C V = 10 V Fig. 1 Fig. 3 1 - 110 A D mb GS 2 - 75 A T = 100 C V = 10 V Fig. 1 2 - 75 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 3 - 438 A DM mb p BUK7610-100B All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 6 July 2012 2 / 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
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