Product Information

BUK7660-100A,118

BUK7660-100A,118 electronic component of NXP

Datasheet
Trans MOSFET N-CH 100V 26A Automotive 3-Pin(2+Tab) D2PAK T/R
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2125 ea
Line Total: USD 1.21

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 1.2125
10 : USD 1.0344
100 : USD 0.8067

0 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 1.2125
10 : USD 1.0344
100 : USD 0.8067

Read More Specifications

     
Manufacturer
Product Category
Packaging
Channel Mode
Continuous Drain Current
Gate-Source Voltage Max
Power Dissipation
Mounting
Drain-Source On-Res
Operating Temp Range
Package Type
Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

More Products By Manufacturer "NXP"

Image Description
BUK7675-100A,118 electronic component of NXP BUK7675-100A,118

Trans MOSFET N-CH 100V 23A Automotive 3-Pin(2+Tab) D2PAK T/R
Stock : 0

BUK768R1-100E,118 electronic component of Nexperia BUK768R1-100E,118

NXP Semiconductors MOSFET TrenchMOS N-Channel
Stock : 0

BUK78150-55A,135 electronic component of NXP BUK78150-55A,135

NXP Semiconductors MOSFET TAPE13 PWR-MOS
Stock : 0

BUK766R0-60E,118 electronic component of Nexperia BUK766R0-60E,118

MOSFET N-CHANNEL TRENCH STD LEVEL
Stock : 709

BUK78150-55ACUX electronic component of Nexperia BUK78150-55ACUX

NXP Semiconductors MOSFET N-channel TrenchMOS standard level FET
Stock : 137667

BUK7675-55A,118 electronic component of Nexperia BUK7675-55A,118

NXP Semiconductors MOSFET TAPE13 PWR-MOS
Stock : 4933

BUK768R3-60E,118 electronic component of Nexperia BUK768R3-60E,118

NXP Semiconductors MOSFET
Stock : 3381

BUK766R0-60E electronic component of NXP BUK766R0-60E

MOSFET, N-CH, 60V, 75A, D2PAK
Stock : 0

BUK78150-55A electronic component of NXP BUK78150-55A

MOSFET, N CH 55V 5.5A SOT223
Stock : 0

More Products By Category "MOSFET"

Image Description
BUK7675-55A,118 electronic component of Nexperia BUK7675-55A,118

NXP Semiconductors MOSFET TAPE13 PWR-MOS
Stock : 4933

BUK768R3-60E,118 electronic component of Nexperia BUK768R3-60E,118

NXP Semiconductors MOSFET
Stock : 3381

BUK7880-55ACUX electronic component of Nexperia BUK7880-55ACUX

NXP Semiconductors MOSFET N-channel TrenchMOS standard level FET
Stock : 21631

BUK7907-40ATC,127 electronic component of NXP BUK7907-40ATC,127

Trans MOSFET N-CH 40V 140A Automotive 5-Pin(5+Tab) TO-220 Rail
Stock : 0

BUK7907-55ATE,127 electronic component of NXP BUK7907-55ATE,127

Trans MOSFET N-CH 55V 140A Automotive 5-Pin(5+Tab) TO-220 Rail
Stock : 0

BUK7908-40AIE,127 electronic component of NXP BUK7908-40AIE,127

Trans MOSFET N-CH 40V 117A Automotive 5-Pin(5+Tab) TO-220 Rail
Stock : 0

BUK7909-75ATE,127 electronic component of NXP BUK7909-75ATE,127

Trans MOSFET N-CH 75V 120A Automotive 5-Pin(5+Tab) TO-220 Rail
Stock : 0

BUK7C08-55AITE,118 electronic component of NXP BUK7C08-55AITE,118

MOSFET TRENCHPLUS MOSFET
Stock : 0

BUK7K35-60EX electronic component of Nexperia BUK7K35-60EX

Mosfet Array 2 N-Channel (Dual) 60V 20.7A 38W Surface Mount LFPAK56D
Stock : 6421

BUK7Y12-40EX electronic component of Nexperia BUK7Y12-40EX

N-Channel 40 V 52A (Tc) 65W (Tc) Surface Mount LFPAK56, Power-SO8
Stock : 2568

Additional Infomation About Product

BUK7660-100A N-channel TrenchMOS standard level FET Rev. 02 7 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for standard level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V, 24 V and 42 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current V =10V T =25C --26 A D GS mb see Figure 1 see Figure 3 P total power dissipation T = 25 C see Figure 2 --106W tot mb Static characteristics R drain-source on-state V =10V I =15A --150m DSon GS D resistance T =175 C see Figure 12 j see Figure 13 V =10V I =15A - 5160m GS D T =25C see Figure 12 j see Figure 13 Avalanche ruggedness E non-repetitive I =20A V 100 V --110mJ DS(AL)S D sup drain-source avalanche R =50 V =10V GS GS energy T = 25 C unclamped j(init)BUK7660-100A Nexperia N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7660-100A D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage R =20k - 100 V DGR GS V gate-source voltage -20 20 V GS I drain current T =25C V = 10 V see Figure 1 -26 A D mb GS see Figure 3 T =100 C V = 10 V see Figure 1 -19 A mb GS I peak drain current T = 25 C pulsed t 10 s - 106 A DM mb p see Figure 3 P total power dissipation T = 25 C see Figure 2 - 106 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T =25C - 26 A S mb I peak source current pulsed t 10 s T = 25 C - 106 A SM p mb Avalanche ruggedness E non-repetitive drain-source I =20 A V 100 V R =50 -110 mJ DS(AL)S D sup GS avalanche energy V =10V T = 25 C unclamped GS j(init) BUK7660-100A All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 7 February 2011 2 of 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

Looking for help? Visit our FAQ's Section to answer to all your questions

Resources

Company

Support

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
  +61 8 9358 9358 |   sales@x-on.com.au |   Chat
 
Policies | Terms and Conditions | Sitemap

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted