BUK762R7-30B,118 NXP

BUK762R7-30B,118 electronic component of NXP
BUK762R7-30B,118 NXP
BUK762R7-30B,118 MOSFETs
BUK762R7-30B,118  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of BUK762R7-30B,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK762R7-30B,118 MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BUK762R7-30B,118
Manufacturer: NXP
Category: MOSFETs
Description: Trans MOSFET N-CH 30V 241A Automotive 3-Pin(2+Tab) D2PAK T/R
Datasheet: BUK762R7-30B,118 Datasheet (PDF)
Price (USD)
9: USD 4.0429 ea
Line Total: USD 36.39 
Availability : 0
  
QtyUnit Price
9$ 4.0429
   
Manufacturer
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Channel Mode
Continuous Drain Current
Gate Source Voltage Max
Power Dissipation
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Drain Source On Res
Operating Temp Range
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Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain Source On Volt
Rad Hardened
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We are delighted to provide the BUK762R7-30B,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK762R7-30B,118 and other electronic components in the MOSFETs category and beyond.

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BUK762R7-30B N-channel TrenchMOS standard level FET Rev. 04 8 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for standard level gate drive on-state resistance sources Q101 compliant Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 30 V DS j j 1 I drain current V =10V T =25C --75 A D GS mb see Figure 1 see Figure 3 P total power dissipation T =25C see Figure 2 --300W tot mb Static characteristics R drain-source on-state V =10V I =25A -2.3 2.7 m DSon GS D resistance T =25C see Figure 11 j see Figure 12 Avalanche ruggedness E non-repetitive I =75A V 30 V --2.3 J DS(AL)S D sup drain-source avalanche R =50 V =10V GS GS energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =10V I =25A -29 -nC GD GS D V =24V T =25C DS j see Figure 13 1 Continuous current is limited by package.BUK762R7-30B Nexperia N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK762R7-30B D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) BUK762R7-30B All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 8 June 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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