Product Information

BUK762R7-30B,118

BUK762R7-30B,118 electronic component of NXP

Datasheet
Trans MOSFET N-CH 30V 241A Automotive 3-Pin(2+Tab) D2PAK T/R

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

9: USD 4.0429 ea
Line Total: USD 36.39

0 - Global Stock
MOQ: 9  Multiples: 1
Pack Size: 1
     
Manufacturer
Product Category
Packaging
Channel Mode
Continuous Drain Current
Gate Source Voltage Max
Power Dissipation
Mounting
Drain Source On Res
Operating Temp Range
Package Type
Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain Source On Volt
Rad Hardened
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BUK762R7-30B N-channel TrenchMOS standard level FET Rev. 04 8 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for standard level gate drive on-state resistance sources Q101 compliant Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 30 V DS j j 1 I drain current V =10V T =25C --75 A D GS mb see Figure 1 see Figure 3 P total power dissipation T =25C see Figure 2 --300W tot mb Static characteristics R drain-source on-state V =10V I =25A -2.3 2.7 m DSon GS D resistance T =25C see Figure 11 j see Figure 12 Avalanche ruggedness E non-repetitive I =75A V 30 V --2.3 J DS(AL)S D sup drain-source avalanche R =50 V =10V GS GS energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =10V I =25A -29 -nC GD GS D V =24V T =25C DS j see Figure 13 1 Continuous current is limited by package.BUK762R7-30B Nexperia N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK762R7-30B D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) BUK762R7-30B All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 8 June 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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