BUK7620-100A,118 NXP

BUK7620-100A N-channel TrenchMOS standard level FET Rev. 2 2 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for standard level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V, 24 V and 42 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175 C - - 100 V DS j j voltage I drain current V =10V T =25C --63 A D GS mb see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 --200W tot mb dissipation Static characteristics R drain-source V =10V I =25A --50 m DSon GS D on-state T = 175 C see Figure 12 j resistance see Figure 13 V =10V I =25A - 1720m GS D T =25C see Figure 12 j see Figure 13 Avalanche ruggedness E non-repetitive I =60A V 100 V --400mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) D2PAKBUK7620-100A NXP Semiconductors N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7620-100A D2PAK plastic single-ended surface-mounted package (D2PAK) SOT404 3 leads (one lead cropped) BUK7620-100A All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 2 February 2011 2 of 13