Product Information

BUK7620-100A,118

BUK7620-100A,118 electronic component of NXP

Datasheet
MOSFET TAPE13 PWR-MOS
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

800: USD 1.0756 ea
Line Total: USD 860.48

0 - Global Stock
MOQ: 800  Multiples: 800
Pack Size: 800

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 800
Multiples : 800
800 : USD 1.0756

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Additional Infomation About Product

BUK7620-100A N-channel TrenchMOS standard level FET Rev. 2 2 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for standard level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V, 24 V and 42 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175 C - - 100 V DS j j voltage I drain current V =10V T =25C --63 A D GS mb see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 --200W tot mb dissipation Static characteristics R drain-source V =10V I =25A --50 m DSon GS D on-state T = 175 C see Figure 12 j resistance see Figure 13 V =10V I =25A - 1720m GS D T =25C see Figure 12 j see Figure 13 Avalanche ruggedness E non-repetitive I =60A V 100 V --400mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) D2PAKBUK7620-100A NXP Semiconductors N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7620-100A D2PAK plastic single-ended surface-mounted package (D2PAK) SOT404 3 leads (one lead cropped) BUK7620-100A All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 2 February 2011 2 of 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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