X-On Electronics has gained recognition as a prominent supplier of BUK7E3R5-60E,127 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK7E3R5-60E,127 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK7E3R5-60E,127 Nexperia

BUK7E3R5-60E,127 electronic component of Nexperia
BUK7E3R5-60E,127 Nexperia
BUK7E3R5-60E,127 MOSFETs
BUK7E3R5-60E,127  Semiconductors

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Part No. BUK7E3R5-60E,127
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET BUK7E3R5-60E/I2PAK/STANDARD MA
Datasheet: BUK7E3R5-60E,127 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.964
10 : USD 1.9195
30 : USD 1.8905
100 : USD 1.8613
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.6325
3 : USD 2.3611
10 : USD 1.7233
25 : USD 1.6283
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
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We are delighted to provide the BUK7E3R5-60E,127 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK7E3R5-60E,127 and other electronic components in the MOSFETs category and beyond.

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BUK7E3R5-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True standard level gate with VGS(th) rating of greater than 1V at 175 C 1.3 Applications 12 V Automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 60 V DS j j I drain current V = 10 V T = 25 C Fig. 1 1 - - 120 A D GS mb P total power dissipation T = 25 C Fig. 2 - - 293 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 2.6 3.5 m DSon GS D j resistance Fig. 11 Dynamic characteristics Q gate-drain charge I = 25 A V = 48 V V = 10 V - 34.8 - nC GD D DS GS Fig. 13 Fig. 14 1 Continuous current is limited by package.Nexperia BUK7E3R5-60E N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S mb D mounting base connected to drain 1 2 3 I2PAK (SOT226) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7E3R5-60E I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 60 V DS j j V drain-gate voltage R = 20 k - 60 V DGR GS V gate-source voltage T 175 C DC -20 20 V GS j I drain current T = 25 C V = 10 V Fig. 1 1 - 120 A D mb GS T = 100 C V = 10 V Fig. 1 1 - 120 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 4 - 785 A DM mb p P total power dissipation T = 25 C Fig. 2 - 293 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T = 25 C 1 - 120 A S mb I peak source current pulsed t 10 s T = 25 C - 785 A SM p mb BUK7E3R5-60E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 11 September 2012 2 / 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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