Product Information

BUK7E5R2-100E,127

BUK7E5R2-100E,127 electronic component of Nexperia

Datasheet
MOSFET N-channel TrenchMOS standard level FET
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 6.883
10 : USD 2.4259
100 : USD 1.9182
500 : USD 1.7602
1000 : USD 1.5007
2500 : USD 1.4443
5000 : USD 1.4443
10000 : USD 1.3879
25000 : USD 1.3766
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Package Case
Brand
Fall Time
Id Continuous Drain Current
Pd Power Dissipation
Qg Gate Charge
Rds On Drain Source Resistance
Rise Time
Factory Pack Quantity :
Typical Turn Off Delay Time
Vds Drain Source Breakdown Voltage
Vgs Gate Source Breakdown Voltage
Vgs Th Gate Source Threshold Voltage
Rohs Mouser
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

BUK7E5R2-100E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True standard level gate with VGS(th) rating of greater than 1V at 175 C 1.3 Applications 12V, 24V and 48V Automotive systems Electric and electro-hydraulic power steering Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current V = 10 V T = 25 C Fig. 1 1 - - 120 A D GS mb P total power dissipation T = 25 C Fig. 2 - - 349 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 4.1 5.2 m DSon GS D j resistance Fig. 11 Dynamic characteristics Q gate-drain charge V = 10 V I = 25 A V = 80 V - 65 - nC GD GS D DS T = 25 C Fig. 13 Fig. 14 j 1 Continuous current is limited by package.Nexperia BUK7E5R2-100E N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S mb D mounting base connected to drain 1 2 3 I2PAK (SOT226) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7E5R2-100E I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 4. Marking Table 4. Marking codes Type number Marking code BUK7E5R2-100E BUK7E5R2-100E 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage R = 20 k - 100 V DGR GS V gate-source voltage T 175 C DC -20 20 V GS j I drain current T = 25 C V = 10 V Fig. 1 1 - 120 A D mb GS T = 100 C V = 10 V Fig. 1 - 112 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 4 - 631 A DM mb p P total power dissipation T = 25 C Fig. 2 - 349 W tot mb T storage temperature -55 175 C stg BUK7E5R2-100E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 11 September 2012 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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