BUK9219-55A,118 NXP

BUK9219-55A,118 electronic component of NXP
BUK9219-55A,118 NXP
BUK9219-55A,118 MOSFETs
BUK9219-55A,118  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BUK9219-55A,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK9219-55A,118 MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BUK9219-55A,118
Manufacturer: NXP
Category: MOSFETs
Description: MOSFET TAPE13 PWR-MOS
Datasheet: BUK9219-55A,118 Datasheet (PDF)
Price (USD)
2500: USD 0.4397 ea
Line Total: USD 1099.25 
Availability : 0
  
QtyUnit Price
2500$ 0.4397

Availability 0
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.5159


Availability 0
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.3334
10$ 1.1768
100$ 0.93
500$ 0.7212
1000$ 0.5694


Availability 0
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.4397

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUK9219-55A,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9219-55A,118 and other electronic components in the MOSFETs category and beyond.

Image Part-Description
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Image Part-Description
Stock Image BUK9222-55A,118
Trans MOSFET N-CH 55V 48A Automotive 3-Pin(2+Tab) DPAK T/R
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Stock Image BUK9225-55A,118
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Stock : 0
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Stock Image BUK9226-75A,118
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image BUK9230-100B,118
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Stock : 0
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Stock : 0
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Stock : 0
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Stock Image BUK9616-75B,118
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Stock Image BUK9624-55A,118
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Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

BUK9219-55A N-channel TrenchMOS logic level FET Rev. 02 7 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for logic level gate drive on-state resistance sources Q101 compliant Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V and 24 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --55 V DS j j voltage I drain current V =5V T =25C --55 A D GS mb see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 --114W tot mb dissipationBUK9219-55A NXP Semiconductors N-channel TrenchMOS logic level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Static characteristics R drain-source V =4.5 V I =25A --20 m DSon GS D on-state T =25C see Figure 12 j resistance see Figure 13 V =10V I =25A -14 17.6m GS D T =25C see Figure 12 j see Figure 13 V =5V I =25A - 1519m GS D T =25C see Figure 12 j see Figure 13 Avalanche ruggedness E non-repetitive I =49A V 55 V --120mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init) 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 1 3 SOT428 (DPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9219-55A DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) BUK9219-55A All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 7 June 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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