X-On Electronics has gained recognition as a prominent supplier of BUK7M15-40HX MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK7M15-40HX MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK7M15-40HX Nexperia

BUK7M15-40HX electronic component of Nexperia
BUK7M15-40HX Nexperia
BUK7M15-40HX MOSFETs
BUK7M15-40HX  Semiconductors

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See Product Specifications
Part No. BUK7M15-40HX
Manufacturer: Nexperia
Category: MOSFETs
Description: Transistor MOSFET 40V 30A 8-Pin LFPAK33
Datasheet: BUK7M15-40HX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.57 ea
Line Total: USD 0.57 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 3000
Multiples : 3000
3000 : USD 0.3479

0
Ship by Mon. 02 Jun to Wed. 04 Jun
MOQ : 1
Multiples : 1
1 : USD 0.57
10 : USD 0.5688
100 : USD 0.363
500 : USD 0.3245
1500 : USD 0.2981
3000 : USD 0.2717
9000 : USD 0.2497

0
Ship by Mon. 02 Jun to Wed. 04 Jun
MOQ : 1
Multiples : 1
1 : USD 1.0896
5 : USD 0.7639
25 : USD 0.6893
31 : USD 0.5157
84 : USD 0.4871

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the BUK7M15-40HX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK7M15-40HX and other electronic components in the MOSFETs category and beyond.

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BUK7M15-40H N-channel 40 V, 15.0 m standard level MOSFET in LFPAK33 29 January 2019 Product data sheet 1. General description Automotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications. 2. Features and benefits Fully automotive qualified to AEC-Q101 at 175 C Trench 9 superjunction technology: Low power losses, high power density LFPAK copper clip package technology: High robustness and reliability Gull wing leads for high manufacturability and AOI Repetitive avalanche rated 3. Applications 12 V automotive systems Powertrain, chassis, body and infotainment applications Medium/Low power motor drive DC-DC systems LED lighting 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 40 V DS j I drain current V = 10 V T = 25 C Fig. 2 1 - - 30 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 44 W tot mb Static characteristics R drain-source on-state V = 10 V I = 10 A T = 25 C 8.5 12.2 15 m DSon GS D j resistance Fig. 11 Dynamic characteristics Q gate-drain charge I = 10 A V = 32 V V = 10 V - 1.7 3.4 nC GD D DS GS Fig. 13 Fig. 14 Source-drain diode Q recovered charge I = 10 A dI /dt = -100 A/s V = 0 V - 11 - nC r S S GS V = 20 V DSNexperia BUK7M15-40H N-channel 40 V, 15.0 m standard level MOSFET in LFPAK33 Symbol Parameter Conditions Min Typ Max Unit S softness factor I = 10 A dI /dt = -100 A/s V = 0 V - 0.56 - S S GS V = 20 V T = 25 C Fig. 17 DS j 1 30A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source D 2 S source G 3 S source 4 G gate mbb076 S mb D Mounting base connected to drain 1 2 3 4 LFPAK33 (SOT1210) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7M15-40H LFPAK33 Plastic, single ended surface mounted package (LFPAK33) 8 SOT1210 leads 0.65 mm pitch 7. Marking Table 4. Marking codes Type number Marking code BUK7M15-40H 71540H 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 40 V DS j V gate-source voltage DC T 175 C -10 20 V GS j P total power dissipation T = 25 C Fig. 1 - 44 W tot mb I drain current V = 10 V T = 25 C Fig. 2 1 - 30 A D GS mb V = 10 V T = 100 C Fig. 2 - 27.4 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 155 A DM p mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode BUK7M15-40H All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 29 January 2019 2 / 11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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