Product Information

BUK7M6R7-40HX

BUK7M6R7-40HX electronic component of Nexperia

Datasheet
Transistor MOSFET 40V 50A 8-Pin LFPAK33
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.4559 ea
Line Total: USD 1.46

1455 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1455 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

BUK7M6R7-40HX
Nexperia

1 : USD 1.259
10 : USD 1.0535
30 : USD 0.9407
100 : USD 0.8138
500 : USD 0.7575
1500 : USD 0.7313

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

BUK7M6R7-40H N-channel 40 V, 6.7 m standard level MOSFET in LFPAK33 5 February 2019 Product data sheet 1. General description Automotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications. 2. Features and benefits Fully automotive qualified to AEC-Q101 at 175 C Trench 9 superjunction technology: Low power losses, high power density LFPAK copper clip package technology: High robustness and reliability Gull wing leads for high manufacturability and AOI Repetitive avalanche rated 3. Applications 12 V automotive systems Powertrain, chassis, body and infotainment applications Medium/Low power motor drive DC-DC systems LED lighting 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 40 V DS j I drain current V = 10 V; T = 25 C; Fig. 2 [1] - - 50 A D GS mb P total power dissipation T = 25 C; Fig. 1 - - 65 W tot mb Static characteristics R drain-source on-state V = 10 V; I = 20 A; T = 25 C; 4 5.7 6.7 m DSon GS D j resistance Fig. 11 Dynamic characteristics Q gate-drain charge I = 20 A; V = 32 V; V = 10 V; - 3.2 6.4 nC GD D DS GS Fig. 13; Fig. 14 Source-drain diode Q recovered charge I = 20 A; dI /dt = -100 A/s; V = 0 V; - 17 - nC r S S GS V = 20 V DSNexperia BUK7M6R7-40H N-channel 40 V, 6.7 m standard level MOSFET in LFPAK33 Symbol Parameter Conditions Min Typ Max Unit S softness factor I = 20 A; dI /dt = -100 A/s; V = 0 V; - 0.62 - S S GS V = 20 V; T = 25 C; Fig. 17 DS j [1] 50A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source D 2 S source G 3 S source 4 G gate mbb076 S mb D Mounting base; connected to drain 1 2 3 4 LFPAK33 (SOT1210) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7M6R7-40H LFPAK33 Plastic, single ended surface mounted package (LFPAK33); 8 SOT1210 leads; 0.65 mm pitch 7. Marking Table 4. Marking codes Type number Marking code BUK7M6R7-40H 76H740 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 40 V DS j V gate-source voltage DC; T 175 C -10 20 V GS j P total power dissipation T = 25 C; Fig. 1 - 65 W tot mb I drain current V = 10 V; T = 25 C; Fig. 2 [1] - 50 A D GS mb V = 10 V; T = 100 C; Fig. 2 - 50 A GS mb I peak drain current pulsed; t 10 s; T = 25 C; Fig. 3 - 282 A DM p mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode BUK7M6R7-40H All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 5 February 2019 2 / 11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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