Product Information

BUK7M33-60E,115

BUK7M33-60E,115 electronic component of NXP

MOSFET N Trench 60V 24A (Tmb) 4V @ 1mA 33 mO @ 5A,10V LFPAK33 RoHS

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8975 ea
Line Total: USD 0.9

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 0.8975
10 : USD 0.6705
30 : USD 0.6278
100 : USD 0.5877
500 : USD 0.5691
1000 : USD 0.5583
6000 : USD 0.536

     
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The BUK7M33-60E,115 is a N-Channel MOSFET manufactured by NXP with a Trench technology design. It has a drain-source voltage of 60 V and a current rating of 24 A. It has a gate-source voltage of 4V @ 1mA and a drain-source on-state resistance of 33 mO @ 5A. The Cut-off voltage is 10V and it comes in LFPAK33 RoHS package that is lead-free.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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