BUK7S1R0-40H N-channel 40 V, 1.0 m standard level MOSFET in LFPAK88 26 April 2019 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a copper-clip LFPAK88 package. This product has been fully designed and qualified to meet beyond AEC-Q101 requirements delivering high performance and reliability. 2. Features and benefits Fully automotive qualified to beyond AEC-Q101: -55 C to +175 C rating suitable for thermally demanding environments LFPAK88 package: Designed for smaller footprint and improved power density over older wire bond packages such as DPAK for todays space constrained high power automotive applications Thin package and copper clip enables LFPAK88 to be highly efficient thermally LFPAK copper clip technology enabling improvements over wire bond packages by: Increased maximum current capability and excellent current spreading Improved R DSon Low source inductance Low thermal resistance R th LFPAK Gull Wing leads: Flexible leads enabling high Board Level Reliability absorbing mechanical and thermal cycling stress, unlike traditional QFN packages Visual (AOI) soldering inspection, no need for expensive x-ray equipment Easy solder wetting for good mechanical solder joint Unique 40 V Trench 9 superjunction technology: Reduced cell pitch and superjunction platform enables lower R in the same footprint DSon Improved SOA and avalanche capability compared to standard TrenchMOS Tight V limits enable easy paralleling of MOSFETs GS(th) 3. Applications 12 V automotive systems 48 V DC/DC systems (on 12 V secondary side) Higher power motors, lamps and solenoid control Reverse polarity protection LED lighting Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 40 V DS j I drain current V = 10 V T = 25 C Fig. 2 1 - - 325 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 375 W tot mbNexperia BUK7S1R0-40H N-channel 40 V, 1.0 m standard level MOSFET in LFPAK88 Symbol Parameter Conditions Min Typ Max Unit Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C 0.62 0.88 1 m DSon GS D j resistance Fig. 11 Dynamic characteristics Q gate-drain charge I = 25 A V = 32 V V = 10 V - 17 34 nC GD D DS GS Fig. 13 Fig. 14 Source-drain diode Q recovered charge I = 25 A dI /dt = -100 A/s V = 0 V 2 - 49 - nC r S S GS V = 20 V DS S softness factor I = 25 A dI /dt = -100 A/s V = 0 V - 0.8 - S S GS V = 20 V T = 25 C DS j 1 325A continuous current has been successfully demonstrated during application. practically the current will be limited by PCB, thermal design and operating temperature. 2 includes capacitive recovery 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 2 S source G 3 S source 4 S source mbb076 S mb D mounting base connected to drain 1 2 3 4 LFPAK88 (SOT1235) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7S1R0-40H LFPAK88 plastic, single-ended surface-mounted package (LFPAK88) 4 SOT1235 leads 2 mm pitch 8 mm x 8 mm x 1.6 mm body 7. Marking Table 4. Marking codes Type number Marking code BUK7S1R0-40H 7S1R040H 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 40 V DS j BUK7S1R0-40H All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 26 April 2019 2 / 13