X-On Electronics has gained recognition as a prominent supplier of BUK7Y1R7-40HX MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK7Y1R7-40HX MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK7Y1R7-40HX Nexperia

BUK7Y1R7-40HX electronic component of Nexperia
BUK7Y1R7-40HX Nexperia
BUK7Y1R7-40HX MOSFETs
BUK7Y1R7-40HX  Semiconductors

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See Product Specifications
Part No. BUK7Y1R7-40HX
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET Mosfet1.7ohmsTrench9 AEC-Q101 qualified
Datasheet: BUK7Y1R7-40HX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
291: USD 0.8959 ea
Line Total: USD 260.71 
Availability - 1440
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ: 291  Multiples: 1
Pack Size: 1
Availability Price Quantity
1440
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 291
Multiples : 1
291 : USD 0.8959
295 : USD 0.8819
300 : USD 0.8681
305 : USD 0.8543
310 : USD 0.8406
500 : USD 0.7949
1000 : USD 0.7816

1435
Ship by Wed. 11 Jun to Mon. 16 Jun
MOQ : 1
Multiples : 1
1 : USD 4.9376
10 : USD 2.8017
30 : USD 2.469
100 : USD 2.1272
500 : USD 1.973
1500 : USD 1.9062

9848
Ship by Mon. 02 Jun to Wed. 04 Jun
MOQ : 1
Multiples : 1
1 : USD 1.25
100 : USD 1.0846
500 : USD 1.0747
1500 : USD 1.0472

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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We are delighted to provide the BUK7Y1R7-40HX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK7Y1R7-40HX and other electronic components in the MOSFETs category and beyond.

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BUK7Y1R7-40H N-channel 40 V, 1.7 m standard level MOSFET in LFPAK56 9 May 2018 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2. Features and benefits Fully automotive qualified to AEC-Q101: 175 C rating suitable for thermally demanding environments Trench 9 Superjunction technology: Reduced cell pitch enables enhanced power density and efficiency with lower R in DSon same footprint Improved SOA and avalanche capability compared to standard TrenchMOS Tight V limits enable easy paralleling of MOSFETs GS(th) LFPAK Gull Wing leads: High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages Visual (AOI) soldering inspection, no need for expensive x-ray equipment Easy solder wetting for good mechanical solder joint LFPAK copper clip technology: Improved reliability, with reduced R and R th DSon Increases maximum current capability and improved current spreading 3. Applications 12 V automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switchingNexperia BUK7Y1R7-40H N-channel 40 V, 1.7 m standard level MOSFET in LFPAK56 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 40 V DS j I drain current V = 10 V T = 25 C - - 120 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 294 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C 0.95 1.35 1.7 m DSon GS D j resistance Fig. 10 Dynamic characteristics Q gate-drain charge I = 25 A V = 32 V V = 10 V - 10 25 nC GD D DS GS Fig. 12 Fig. 13 Source-drain diode Q recovered charge I = 25 A dI /dt = -100 A/s V = 0 V - 25 - nC r S S GS V = 20 V Fig. 16 DS S softness factor I = 25 A dI /dt = -100 A/s V = 0 V - 0.8 - S S GS V = 20 V T = 25 C Fig. 16 DS j BUK7Y1R7-40H All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved Product data sheet 9 May 2018 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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