Product Information

BUK7Y1R7-40HX

BUK7Y1R7-40HX electronic component of Nexperia

Datasheet
MOSFET Mosfet1.7ohmsTrench9 AEC-Q101 qualified
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.1832 ea
Line Total: USD 2.18

10320 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1455 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

BUK7Y1R7-40HX
Nexperia

1 : USD 1.8043
10 : USD 1.7064
25 : USD 1.699
100 : USD 1.6042
250 : USD 1.5998
500 : USD 1.5202
1000 : USD 1.4888

10320 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

BUK7Y1R7-40HX
Nexperia

1 : USD 2.1832
10 : USD 1.934
100 : USD 1.6967
250 : USD 1.6849
500 : USD 1.5187
1000 : USD 1.495
1500 : USD 1.3882
3000 : USD 1.317
9000 : USD 1.2933

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
LoadingGif

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Additional Infomation About Product

BUK7Y1R7-40H N-channel 40 V, 1.7 m standard level MOSFET in LFPAK56 9 May 2018 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2. Features and benefits Fully automotive qualified to AEC-Q101: 175 C rating suitable for thermally demanding environments Trench 9 Superjunction technology: Reduced cell pitch enables enhanced power density and efficiency with lower R in DSon same footprint Improved SOA and avalanche capability compared to standard TrenchMOS Tight V limits enable easy paralleling of MOSFETs GS(th) LFPAK Gull Wing leads: High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages Visual (AOI) soldering inspection, no need for expensive x-ray equipment Easy solder wetting for good mechanical solder joint LFPAK copper clip technology: Improved reliability, with reduced R and R th DSon Increases maximum current capability and improved current spreading 3. Applications 12 V automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switchingNexperia BUK7Y1R7-40H N-channel 40 V, 1.7 m standard level MOSFET in LFPAK56 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 40 V DS j I drain current V = 10 V T = 25 C - - 120 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 294 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C 0.95 1.35 1.7 m DSon GS D j resistance Fig. 10 Dynamic characteristics Q gate-drain charge I = 25 A V = 32 V V = 10 V - 10 25 nC GD D DS GS Fig. 12 Fig. 13 Source-drain diode Q recovered charge I = 25 A dI /dt = -100 A/s V = 0 V - 25 - nC r S S GS V = 20 V Fig. 16 DS S softness factor I = 25 A dI /dt = -100 A/s V = 0 V - 0.8 - S S GS V = 20 V T = 25 C Fig. 16 DS j BUK7Y1R7-40H All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved Product data sheet 9 May 2018 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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