Product Information

PMCM4401UNEZ

PMCM4401UNEZ electronic component of Nexperia

Datasheet
MOSFET MOS Discretes WLCSP

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4082 ea
Line Total: USD 0.41

76455 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9678 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

PMCM4401UNEZ
Nexperia

1 : USD 0.3902
10 : USD 0.2195
25 : USD 0.2173
50 : USD 0.215
100 : USD 0.1289
250 : USD 0.1274
500 : USD 0.1231
1000 : USD 0.1206
3000 : USD 0.1206
6000 : USD 0.1206

87300 - WHS 2


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 9000
Multiples : 9000

Stock Image

PMCM4401UNEZ
Nexperia

9000 : USD 0.1431
18000 : USD 0.1393
36000 : USD 0.1355
54000 : USD 0.1317
72000 : USD 0.1279
90000 : USD 0.124
900000 : USD 0.1202

76455 - WHS 3


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

Stock Image

PMCM4401UNEZ
Nexperia

1 : USD 0.4082
10 : USD 0.3071
100 : USD 0.1736
1000 : USD 0.1208
9000 : USD 0.1104
18000 : USD 0.1104

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
LoadingGif

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PMCM4401UNE 20 V, N-channel Trench MOSFET 29 May 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package: 0.78 x 0.78 x 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Battery switch High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = 4.5 V T = 25 C t 5 s 1 - - 5.4 A D GS amb Static characteristics R drain-source on-state V = 4.5 V I = 3 A T = 25 C - 43 52 m DSon GS D j resistance 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cmNexperia PMCM4401UNE 20 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol A1 G gate 1 2 D A2 S source A B1 D drain G B2 S source B S Transparent top view 017aaa255 WLCSP4 (WLCSP4 2-2) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMCM4401UNE WLCSP4 wafer level chip-size package 4 bumps (2 x 2) WLCSP4 2-2 7. Marking Table 4. Marking codes Type number Marking code PMCM4401UNE R 2 PIN A1 INDICATION MARKING CODE 1 (EXAMPLE) A B Top view, balls down aaa-012880 Fig. 1. WLCSP4 marking code description PMCM4401UNE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 29 May 2017 2 / 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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