BUK7Y98-80EX Nexperia

BUK7Y98-80EX electronic component of Nexperia
BUK7Y98-80EX Nexperia
BUK7Y98-80EX MOSFETs
BUK7Y98-80EX  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BUK7Y98-80EX MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK7Y98-80EX MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BUK7Y98-80EX
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-channel 80 V 98 mOhm MOSFET
Datasheet: BUK7Y98-80EX Datasheet (PDF)
Price (USD)
1: USD 0.8975 ea
Line Total: USD 0.9 
Availability : 0
  
QtyUnit Price
1$ 0.8975
10$ 0.7188
100$ 0.44
500$ 0.3454
1000$ 0.1991
1500$ 0.1826
3000$ 0.1661
9000$ 0.1595
24000$ 0.1529

Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.2281
3000$ 0.198
4500$ 0.196
7500$ 0.1925
9000$ 0.1841
10500$ 0.179
15000$ 0.174
24000$ 0.1673


Availability 0
Ship by Wed. 22 Oct to Fri. 24 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.8975
10$ 0.7188
100$ 0.44
500$ 0.3454
1000$ 0.1991
1500$ 0.1826
3000$ 0.1661
9000$ 0.1595
24000$ 0.1529


Availability 0
Ship by Wed. 22 Oct to Fri. 24 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0828
5$ 0.5848
25$ 0.5251
40$ 0.3935
109$ 0.3731


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.2542

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Brand
Ciss - Input Capacitance
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUK7Y98-80EX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK7Y98-80EX and other electronic components in the MOSFETs category and beyond.

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BUK7Y98-80E N-channel 80 V, 98 m standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True standard level gate with V rating of greater than 1 V at 175 C GS(th) 3. Applications 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 80 V DS j j I drain current V = 10 V T = 25 C Fig. 1 - - 12.3 A D GS mb P total power dissipation T = 25 C Fig. 2 - - 37 W tot mb Static characteristics R drain-source on-state V = 10 V I = 5 A T = 25 C Fig. 11 - 70 98 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge V = 10 V I = 5 A V = 64 V - 3 - nC GD GS D DS T = 25 C Fig. 13 Fig. 14 jNexperia BUK7Y98-80E N-channel 80 V, 98 m standard level MOSFET in LFPAK56 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7Y98-80E LFPAK56 Plastic single-ended surface-mounted package (LFPAK56 SOT669 Power-SO8 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code BUK7Y98-80E 79880E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 80 V DS j j V drain-gate voltage R = 20 k - 80 V DGR GS V gate-source voltage T 175 C DC -20 20 V GS j I drain current T = 25 C V = 10 V Fig. 1 - 12.3 A D mb GS T = 100 C V = 10 V Fig. 1 - 8.7 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 4 - 49 A DM mb p P total power dissipation T = 25 C Fig. 2 - 37 W tot mb T storage temperature -55 175 C stg BUK7Y98-80E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 8 May 2013 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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