X-On Electronics has gained recognition as a prominent supplier of BUK9529-100B MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK9529-100B MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK9529-100B NXP

BUK9529-100B electronic component of NXP
BUK9529-100B NXP
BUK9529-100B MOSFETs
BUK9529-100B  Semiconductors

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Part No. BUK9529-100B
Manufacturer: NXP
Category: MOSFETs
Description: Trans MOSFET N-CH 100V 46A Automotive 3-Pin(3+Tab) TO-220AB
Datasheet: BUK9529-100B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
14: USD 2.5394 ea
Line Total: USD 35.55 
Availability - 0
MOQ: 14  Multiples: 1
Pack Size: 1
   
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Continuous Drain Current
Gate-Source Voltage Max
Power Dissipation
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Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
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We are delighted to provide the BUK9529-100B from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9529-100B and other electronic components in the MOSFETs category and beyond.

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BUK95/9629-100B TrenchMOS logic level FET Rev. 01 18 April 2003 Product data 1. Product prole 1.1 Description N-channel enhancement mode eld-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. Product availability: BUK9529-100B in SOT78 (TO-220AB) 2 BUK9629-100B in SOT404 (D -PAK). 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible. 1.3 Applications Automotive systems 12 V, 24 V and 42 V loads Motors, lamps and solenoids General purpose power switching. 1.4 Quick reference data E 152 mJ R =24m (typ) DS(AL)S DSon I 46 A P 157 W. D tot 2. Pinning information Table 1: Pinning - SOT78 and SOT404, simplied outline and symbol Pin Description Simplied outline Symbol mb 1 gate (g) 1 mb 2 drain (d) d 3 source (s) mb mounting base g connected to drain (d) MBB076 s 2 MBK106 13 MBK116 12 3 2 SOT78 (TO-220AB) SOT404 (D -PAK) 1 It is not possible to make connection to pin 2 of the SOT404 package.BUK95/9629-100B Philips Semiconductors TrenchMOS logic level FET 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage (DC) - 100 V DS V drain-gate voltage (DC) R =20k - 100 V DGR GS V gate-source voltage (DC) - 15 V GS I drain current (DC) T =25 C V =5V -46 A D mb GS Figure 2 and 3 T = 100 C V =5V Figure 2 -32 A mb GS I peak drain current T =25 C pulsed t 10 s - 186 A DM mb p Figure 3 P total power dissipation T =25 C Figure 1 - 157 W tot mb T storage temperature - 55 +175 C stg T junction temperature - 55 +175 C j Source-drain diode I reverse drain current (DC) T =25 C - 46 A DR mb I peak reverse drain current T =25 C pulsed t 10 s - 186 A DRM mb p Avalanche ruggedness E non-repetitive drain-source avalanche unclamped inductive load I =46A - 152 mJ DS(AL)S D energy V 100 V V =5V R =50 DS GS GS starting T =25 C mb 9397 750 11249 Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 18 April 2003 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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