Product Information

BUK954R8-60E

BUK954R8-60E electronic component of Nexperia

Datasheet
MOSFET, N-CH, 60V, 100A, TO-220AB
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.0897 ea
Line Total: USD 2.09

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 1
Multiples : 1

Stock Image

BUK954R8-60E
Nexperia

1 : USD 3.9829
10 : USD 3.1474
100 : USD 2.5369
500 : USD 2.216
1000 : USD 2.0589

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Svhc
Operating Temperature Min
Operating Temperature Range
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Additional Infomation About Product

BUK954R8-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True logic level gate with VGS(th) rating of greater than 0.5V at 175 C 1.3 Applications 12 V Automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 60 V DS j j I drain current V = 5 V T = 25 C Fig. 1 1 - - 100 A D GS mb P total power dissipation T = 25 C Fig. 2 - - 234 W tot mb Static characteristics R drain-source on-state V = 5 V I = 25 A T = 25 C Fig. 11 - 4 4.9 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge V = 5 V I = 25 A V = 48 V - 20.3 - nC GD GS D DS Fig. 13 Fig. 14 1 Continuous current is limited by package. Scan or click this QR code to view the latest information for this productNXP Semiconductors BUK954R8-60E N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S mb D mounting base connected to drain 1 2 3 TO-220AB (SOT78A) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK954R8-60E TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78A hole 3-lead TO-220AB 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 60 V DS j j V drain-gate voltage R = 20 k - 60 V DGR GS V gate-source voltage T 175 C Pulsed 1 2 -15 15 V GS j T 175 C DC -10 10 V j I drain current T = 25 C V = 5 V Fig. 1 3 - 100 A D mb GS T = 100 C V = 5 V Fig. 1 3 - 100 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 4 - 590 A DM mb p P total power dissipation T = 25 C Fig. 2 - 234 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T = 25 C 3 - 100 A S mb BUK954R8-60E All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved Product data sheet 11 September 2012 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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