Product Information

BUK9606-55B,118

BUK9606-55B,118 electronic component of NXP

Datasheet
Trans MOSFET N-CH 55V 146A Automotive 3-Pin(2+Tab) D2PAK T/R
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

11: USD 3.3956 ea
Line Total: USD 37.35

0 - Global Stock
MOQ: 11  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May


Multiples : 1

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May


Multiples : 1

0 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May


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Read More Specifications

     
Manufacturer
Product Category
Packaging
Channel Mode
Gate-Source Voltage Max
Power Dissipation
Mounting
Drain-Source On-Res
Operating Temp Range
Package Type
Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
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Additional Infomation About Product

BUK9606-55B N-channel TrenchMOS FET Rev. 04 23 July 2009 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for logic level gate drive on-state resistance sources Q101 compliant Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V and 24 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 55 V DS j j 1 I drain current V =5V T =25C --75 A D GS mb see Figure 1 and 3 P total power T = 25 C see Figure 2 - - 258 W tot mb dissipation Avalanche ruggedness E non-repetitive I =75 A V 55 V - - 679 mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =5V I =25A -22 -nC GD GS D V =44V T =25C DS j see Figure 14 and 15Nexperia BUK9606-55B N-channel TrenchMOS FET Table 1. Quick reference continued Symbol Parameter Conditions Min Typ Max Unit Static characteristics R drain-source V =10V I =25A -4.8 5.4 m DSon GS D on-state resistance T =25C j see Figure 11 and 12 V =5V I =25A -5.1 6 m GS D T =25C j see Figure 11 and 12 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 1 2D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9606-55B D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads (one SOT404 lead cropped) Nexperia B.V. 2017. All rights reserved BUK9606-55B 4 Product data sheet Rev. 04 23 July 2009 2 of 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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