BUK9606-55B,118 NXP

BUK9606-55B,118 electronic component of NXP
BUK9606-55B,118 NXP
BUK9606-55B,118 MOSFETs
BUK9606-55B,118  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of BUK9606-55B,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK9606-55B,118 MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BUK9606-55B,118
Manufacturer: NXP
Category: MOSFETs
Description: Trans MOSFET N-CH 55V 146A Automotive 3-Pin(2+Tab) D2PAK T/R
Datasheet: BUK9606-55B,118 Datasheet (PDF)
Price (USD)
11: USD 3.2911 ea
Line Total: USD 36.2 
Availability : 0
  
QtyUnit Price
11$ 3.2911
   
Manufacturer
Product Category
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Channel Mode
Gate-Source Voltage Max
Power Dissipation
Mounting
Drain-Source On-Res
Operating Temp Range
Package Type
Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
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We are delighted to provide the BUK9606-55B,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9606-55B,118 and other electronic components in the MOSFETs category and beyond.

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BUK9606-55B N-channel TrenchMOS FET Rev. 04 23 July 2009 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for logic level gate drive on-state resistance sources Q101 compliant Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V and 24 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 55 V DS j j 1 I drain current V =5V T =25C --75 A D GS mb see Figure 1 and 3 P total power T = 25 C see Figure 2 - - 258 W tot mb dissipation Avalanche ruggedness E non-repetitive I =75 A V 55 V - - 679 mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =5V I =25A -22 -nC GD GS D V =44V T =25C DS j see Figure 14 and 15Nexperia BUK9606-55B N-channel TrenchMOS FET Table 1. Quick reference continued Symbol Parameter Conditions Min Typ Max Unit Static characteristics R drain-source V =10V I =25A -4.8 5.4 m DSon GS D on-state resistance T =25C j see Figure 11 and 12 V =5V I =25A -5.1 6 m GS D T =25C j see Figure 11 and 12 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 1 2D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9606-55B D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads (one SOT404 lead cropped) Nexperia B.V. 2017. All rights reserved BUK9606-55B 4 Product data sheet Rev. 04 23 July 2009 2 of 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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