BUK9606-75B,118 Nexperia

BUK9606-75B,118 electronic component of Nexperia
BUK9606-75B,118 Nexperia
BUK9606-75B,118 MOSFETs
BUK9606-75B,118  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BUK9606-75B,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK9606-75B,118 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BUK9606-75B,118
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET HIGH PERF TRENCHMOS
Datasheet: BUK9606-75B,118 Datasheet (PDF)
Price (USD)
1: USD 4.65 ea
Line Total: USD 4.65 
Availability : 3836
  
Ship by Tue. 09 Sep to Thu. 11 Sep
QtyUnit Price
1$ 4.65
10$ 2.9095
100$ 2.068
500$ 1.76
800$ 1.716

Availability 3836
Ship by Tue. 09 Sep to Thu. 11 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 4.65
10$ 2.9095
100$ 2.068
500$ 1.76
800$ 1.716


Availability 3880
Ship by Thu. 11 Sep to Wed. 17 Sep
MOQ : 219
Multiples : 1
QtyUnit Price
219$ 2.1406
500$ 2.0312
1000$ 1.9063
10000$ 1.7969


Availability 582
Ship by Thu. 11 Sep to Wed. 17 Sep
MOQ : 219
Multiples : 1
QtyUnit Price
219$ 2.1406
500$ 2.0312
1000$ 1.9063
10000$ 1.7969


Availability 2328
Ship by Thu. 11 Sep to Wed. 17 Sep
MOQ : 219
Multiples : 1
QtyUnit Price
219$ 2.1406
500$ 2.0312
1000$ 1.9063
10000$ 1.7969

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUK9606-75B,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9606-75B,118 and other electronic components in the MOSFETs category and beyond.

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BUK9606-75B N-channel TrenchMOS logic level FET Rev. 4 20 July 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for logic level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V, 24 V and 42 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit drain-source voltage T 25 C T 175 C - - 75 V V DS j j 1 drain current V =5V T =25C -- 75 A I D GS mb see Figure 1 see Figure 3 P total power dissipation T = 25 C see Figure 2 -- 300W tot mb Static characteristics R drain-source on-state V =10V I =25A -4.7 5.5 m DSon GS D resistance T =25C j V =5V I =25A -5.2 6.1 m GS D T =25C j see Figure 11 see Figure 12BUK9606-75B Nexperia N-channel TrenchMOS logic level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =75A V 75 V -- 852mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =5V I =25A -37 -nC GD GS D V =60 V T =25C DS j see Figure 13 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9606-75B D2PAK plastic single-ended surface-mounted package (D2PAK) SOT404 3 leads (one lead cropped) BUK9606-75B All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 4 20 July 2011 2 of 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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