X-On Electronics has gained recognition as a prominent supplier of BUK9606-75B,118 mosfet across the USA, India, Europe, Australia, and various other global locations. BUK9606-75B,118 mosfet are a product manufactured by Nexperia. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

BUK9606-75B,118 Nexperia

BUK9606-75B,118 electronic component of Nexperia
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See Product Specifications
Part No.BUK9606-75B,118
Manufacturer: Nexperia
Category:MOSFET
Description: MOSFET HIGH PERF TRENCHMOS
Datasheet: BUK9606-75B,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.289 ea
Line Total: USD 3.29

Availability - 7635
Ships to you between
Fri. 07 Jun to Tue. 11 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3880 - WHS 1


Ships to you between Mon. 03 Jun to Fri. 07 Jun

MOQ : 800
Multiples : 800
800 : USD 2.0995
2400 : USD 2.0007
4800 : USD 1.9409

7635 - WHS 2


Ships to you between Fri. 07 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 3.289
10 : USD 2.806
25 : USD 2.7945
100 : USD 2.3345
800 : USD 1.84
2400 : USD 1.817
4800 : USD 1.7825

3880 - WHS 3


Ships to you between Mon. 03 Jun to Fri. 07 Jun

MOQ : 800
Multiples : 800
800 : USD 2.0995
2400 : USD 2.0007
4800 : USD 1.9409

8536 - WHS 4


Ships to you between Mon. 03 Jun to Fri. 07 Jun

MOQ : 800
Multiples : 800
800 : USD 2.0021
5600 : USD 1.9942

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the BUK9606-75B,118 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9606-75B,118 and other electronic components in the MOSFET category and beyond.

BUK9606-75B N-channel TrenchMOS logic level FET Rev. 4 20 July 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for logic level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V, 24 V and 42 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit drain-source voltage T 25 C T 175 C - - 75 V V DS j j 1 drain current V =5V T =25C -- 75 A I D GS mb see Figure 1 see Figure 3 P total power dissipation T = 25 C see Figure 2 -- 300W tot mb Static characteristics R drain-source on-state V =10V I =25A -4.7 5.5 m DSon GS D resistance T =25C j V =5V I =25A -5.2 6.1 m GS D T =25C j see Figure 11 see Figure 12BUK9606-75B Nexperia N-channel TrenchMOS logic level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =75A V 75 V -- 852mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =5V I =25A -37 -nC GD GS D V =60 V T =25C DS j see Figure 13 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9606-75B D2PAK plastic single-ended surface-mounted package (D2PAK) SOT404 3 leads (one lead cropped) BUK9606-75B All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 4 20 July 2011 2 of 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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