BUK969R3-100E,118 Nexperia

BUK969R3-100E,118 electronic component of Nexperia
BUK969R3-100E,118 Nexperia
BUK969R3-100E,118 MOSFETs
BUK969R3-100E,118  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BUK969R3-100E,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK969R3-100E,118 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BUK969R3-100E,118
Manufacturer: Nexperia
Category: MOSFETs
Description: NXP Semiconductors MOSFET
Datasheet: BUK969R3-100E,118 Datasheet (PDF)
Price (USD)
4800: USD 1.111 ea
Line Total: USD 5332.8 
Availability : 0
  
QtyUnit Price
4800$ 1.111

Availability 0
Ship by Wed. 22 Oct to Fri. 24 Oct
MOQ : 4800
Multiples : 4800
QtyUnit Price
4800$ 1.111


Availability 0
Ship by Wed. 22 Oct to Fri. 24 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.433
5$ 3.0938
7$ 2.3217
19$ 2.1955

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Qg - Gate Charge
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUK969R3-100E,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK969R3-100E,118 and other electronic components in the MOSFETs category and beyond.

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BUK969R3-100E N-channel TrenchMOS logic level FET 26 May 2016 Product data sheet 1. General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits AEC Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True logic level gate with Vgst(th) rating of greater than 0.5V at 175 C 3. Applications 12V, 24V and 48V Automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current V = 5 V T = 25 C Fig. 2 - - 100 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 263 W tot mb Static characteristics R drain-source on-state V = 5 V I = 25 A T = 25 C Fig. 11 - 7.49 9.3 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge V = 5 V I = 25 A V = 80 V - 34 - nC GD GS D DS Fig. 13 Fig. 14Nexperia BUK969R3-100E N-channel TrenchMOS logic level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 G gate D 2 D drain G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 D2PAK (SOT404) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK969R3-100E D2PAK plastic single-ended surface-mounted package SOT404 (D2PAK) 3 leads (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code BUK969R3-100E BUK969R3-100E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage R = 20 k - 100 V DGR GS V gate-source voltage T 175 C DC -10 10 V GS j T 175 C Pulsed 1 2 -15 15 V j P total power dissipation T = 25 C Fig. 1 - 263 W tot mb I drain current T = 25 C V = 5 V Fig. 2 - 100 A D mb GS T = 100 C V = 5 V Fig. 2 - 71 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 3 - 405 A DM mb p T storage temperature -55 175 C stg BUK969R3-100E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 26 May 2016 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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