BUK98180-100A,115 NXP

BUK98180-100A N-channel TrenchMOS logic level FET Rev. 03 3 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for logic level gate drive on-state resistance sources Q101 compliant 1.3 Applications 12 V, 24 V and 42 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 150 C - - 100 V DS j j voltage I drain current V =5V T =25C --4.6 A D GS sp see Figure 1 see Figure 3 P total power T =25C see Figure 2 --8 W tot sp dissipation Static characteristics R drain-source V =10V I =5A T =25C - 147 173 m DSon GS D j on-state V =4.5 V I =5A --201m GS D resistance T =25C j V =5V I =5A T =25C -153180m GS D j see Figure 12 see Figure 13 Avalanche ruggedness E non-repetitive I =4A V 100 V --16 mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init)BUK98180-100A NXP Semiconductors N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 4 2 D drain 3S source G 4 D drain 132 mbb076 S SOT223 (SC-73) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK98180-100A SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads BUK98180-100A All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 3 June 2010 2 of 13