Product Information

BUK9880-55ACUX

BUK9880-55ACUX electronic component of Nexperia

Datasheet
NXP Semiconductors MOSFET N-channel TrenchMOS logic level FET
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5348 ea
Line Total: USD 0.53

55636 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
322 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

BUK9880-55ACUX
Nexperia

1 : USD 0.3401
10 : USD 0.2792
100 : USD 0.2418
500 : USD 0.2206
1000 : USD 0.2184
2000 : USD 0.2155
10000 : USD 0.2112
25000 : USD 0.2112
50000 : USD 0.2112

3735 - WHS 2


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

BUK9880-55ACUX
Nexperia

1 : USD 0.4914
10 : USD 0.3968
30 : USD 0.3565
100 : USD 0.3041
500 : USD 0.282
1000 : USD 0.268

55636 - WHS 3


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

BUK9880-55ACUX
Nexperia

1 : USD 0.5348
10 : USD 0.46
100 : USD 0.3358
500 : USD 0.2794
1000 : USD 0.2127
2000 : USD 0.1932
10000 : USD 0.1921
25000 : USD 0.1921
50000 : USD 0.1897

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Transistor Type
Brand
Factory Pack Quantity :
Rohs Mouser
Configuration
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

BUK9880-55A N-channel TrenchMOS logic level FET 19 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits Low conduction losses due to low on-state resistance Q101 compliant Suitable for logic level gate drive sources 3. Applications 12 V and 24 V loads Automotive and general purpose power switching Motors, lamps and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 150 C - - 55 V DS j j I drain current V = 5 V T = 25 C Fig. 3 Fig. 2 - - 7 A D GS sp P total power dissipation T = 25 C Fig. 1 - - 8 W tot sp Static characteristics R drain-source on-state V = 10 V I = 8 A T = 25 C - 62 73 m DSon GS D j resistance V = 4.5 V I = 8 A T = 25 C - - 89 m GS D j V = 5 V I = 8 A T = 25 C Fig. 13 - 68 80 m GS D j Fig. 14 Avalanche ruggedness E non-repetitive drain- I = 6 A V 55 V R = 50 - - 36 mJ DS(AL)S D sup GS source avalanche V = 5 V T = 25 C unclamped GS j(init) energyNexperia BUK9880-55A N-channel TrenchMOS logic level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate 4 D 2 D drain G 3 S source 1 2 3 mbb076 S 4 D drain SC-73 (SOT223) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9880-55A SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads BUK9880-55A/CU SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads 7. Marking Table 4. Marking codes Type number Marking code BUK9880-55A 988055A BUK9880-55A/CU 988055 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 150 C - 55 V DS j j V drain-gate voltage R = 20 k - 55 V DGR GS V gate-source voltage -15 15 V GS P total power dissipation T = 25 C Fig. 1 - 8 W tot sp I drain current T = 100 C V = 5 V Fig. 2 - 4 A D sp GS T = 25 C V = 5 V Fig. 3 Fig. 2 - 7 A sp GS I peak drain current T = 25 C pulsed t 10 s Fig. 3 - 30 A DM sp p BUK9880-55A All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 19 March 2014 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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